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China SiC power devices Manufacturer, Supplier, Factory

Our solutions are greatly recognized and reliable by customers and will fulfill continuously altering financial and social requirements for SiC power devices, SiC single crystal, PVT method, TaC coated ring, Tantalum Carbide Coating, The continual availability of substantial grade products and solutions in combination with our fantastic pre- and after-sales services ensures strong competitiveness in an increasingly globalized current market.
SiC power devices, We are going to do our utmost to cooperate & satisfied with you relying on top-grade quality and competitive price and best after service ,sincerely look forward to cooperating with you and make achievements in the future!

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  • Pyrolytic Carbon(PyC) Coated Graphite Ring

    Pyrolytic Carbon(PyC) Coated Graphite Ring

    In SiC PVT crystal growth setups, graphite parts are run at very high temperatures for long periods. VeTek’s PyC coated graphite ring is built for that kind of duty. A pyrolytic carbon layer gets deposited onto high-purity graphite via CVD. This gives the part better surface stability and fewer particles coming off during operation. You usually put it in the thermal field area to help manage vapor flow and how heat spreads inside the furnace. The coating also slows down graphite sublimation when things go above 2200°C, which makes the whole component last longer.
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Vetek Semiconductor's Porous Ceramic Vacuum Chuck is made of silicon carbide ceramic (SiC) material, which has excellent high temperature resistance, chemical stability and mechanical strength. It is an indispensable core component in the semiconductor process. Welcome your further inquiries.
  • SiC coated E-Chuck

    SiC coated E-Chuck

    Vetek Semiconductor is a leading manufacturer and supplier of SiC coated E-Chucks in China. SiC coated E-Chuck is specially designed for GaN wafer etching process, with excellent performance and long service life, to provide all-round support for your semiconductor manufacturing. Our strong processing ability enables us to provide you with the SiC Ceramic Susceptor you want. Looking forward to your inquire.
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Veteksemicon SiC Cantilever Paddles are high-purity silicon carbide support arms designed for wafer handling in horizontal diffusion furnaces and epitaxial reactors. With exceptional thermal conductivity, corrosion resistance, and mechanical strength, these paddles ensure stability and cleanliness in demanding semiconductor environments. Available in custom sizes and optimized for long service life.
  • TaC Coating Plate

    TaC Coating Plate

    Designed with precision and engineered to perfection, Vetek Semiconductor's TaC Coating Plate is specifically tailored for various applications in silicon carbide (SiC) single crystal growth processes.The TaC Coating Plate's precise dimensions and robust construction make it easy to integrate into existing systems, ensuring seamless compatibility and efficient operation. Its reliable performance and high-quality coating contribute to consistent and uniform results in SiC crystal growth applications.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
  • SiC Ceramics Membrane

    SiC Ceramics Membrane

    Veteksemicon SiC ceramics membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.

  • Material of silicon carbide epitaxy

    Silicon carbide is reshaping the semiconductor industry for power and high-temperature applications, with its comprehensive properties, from epitaxial substrates to protective coatings to electric vehicles and renewable energy systems.

  • 8-inch SiC epitaxial furnace and homoepitaxial process research

    8-inch SiC epitaxial furnace and homoepitaxial process research

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Why Is a Glassy Carbon Coated Graphite Crucible the Preferred Choice for High-Purity Semiconductor and Crystal Growth Applications

    As semiconductor manufacturing, crystal growth technology, and advanced material processing continue to evolve, the demand for ultra-clean and thermally stable components has increased significantly. Among these critical components, the Glassy Carbon Coated Graphite Crucible has emerged as one of the most reliable solutions for high-temperature and high-purity environments.

  • What is Dishing and Erosion in the CMP Process?

    Chemical mechanical polishing (CMP) removes excess material and surface defects through the combined action of chemical reactions and mechanical abrasion. It is a key process for achieving global planarization of the wafer surface and is indispensable for multilayer copper interconnects and low-k dielectric structures. In practical manufacturing

  • CVD SiC Coating: Process, Benefits and Applications

    Explore how CVD SiC coating is used in semiconductor processes, including its structure, performance characteristics, and typical applications, along with its relevance in high-temperature applications.

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