Web Menu

Product Search

Language

Products

China ICP Etching Manufacturer, Supplier, Factory

Our staff are generally while in the spirit of "continuous improvement and excellence", and while using the excellent high quality merchandise, favorable value and great after-sales services, we try to gain each customer's have faith in for ICP Etching, SiC ICP Etching Plate, ICP/PSS Etching Process, PSS Etching Carrier Plate for Semiconductor, Pii Carbide Coated, Adhering for the enterprise philosophy of 'customer initial, forge ahead', we sincerely welcome consumers from in the home and abroad to cooperate with us.
ICP Etching, After years' creating and developing, with the advantages of trained qualified talents and rich marketing experience, outstanding achievements were gradually made. We get good reputation from the customers due to our good solutions quality and fine after-sale service. We sincerely wish to create a more prosperous and flourishing future together with all the friends home and abroad!

Related Products

Hot Products

  • TaC Coated ring

    TaC Coated ring

    As a leading manufacturer and supplier of TaC Coated ring products in China, VeTek Semiconductor has been focusing on the R&D and production of various TaC coating products. As the main customers of TaC Coating products, European and American manufacturers have given high praise to our coating products. Welcome to your further consultation.
  • TaC Coating Planetary Susceptor

    TaC Coating Planetary Susceptor

    TaC Coating Planetary Susceptor is an exceptional product for Aixtron epitaxy equipment. VeTek Semiconductor's TaC coating provides excellent high-temperature resistance and chemical inertness. This unique combination ensures reliable performance and long service life, even in demanding environments. VeTek is committed to providing high-quality products and serving as a long-term partner in the Chinese market with competitive pricing.
  • CVD SiC Coating Baffle

    CVD SiC Coating Baffle

    Vetek's CVD SiC Coating Baffle is mainly used in Si Epitaxy. It is usually used with silicon extension barrels. It combines the unique high temperature and stability of the CVD SiC Coating Baffle, which greatly improves the uniform distribution of airflow in semiconductor manufacturing. We believe that our products can bring you Advanced Technology and High-Quality Product Solutions.
  • CVD TaC coated three-petal guide ring

    CVD TaC coated three-petal guide ring

    VeTek Semiconductor has experienced many years of technological development and has mastered the leading process technology of CVD TaC coating. CVD TaC coated three-petal guide ring is one of VeTek Semiconductor's most mature CVD TaC coating products and is an important component for preparing SiC crystals by PVT method. With the help of VeTek Semiconductor, I believe your SiC crystal production will be smoother and more efficient.
  • CVD SiC coating Epitaxy susceptor

    CVD SiC coating Epitaxy susceptor

    VeTek Semiconductor's CVD SiC Coating Epitaxy Susceptor is a precision-engineered tool designed for semiconductor wafer handling and processing. This SiC Coating Epitaxy Susceptor plays a vital role in promoting the growth of thin films, epilayers, and other coatings, and can precisely control temperature and material properties. Welcome your further inquiries.
  • SiC Ceramics Membrane

    SiC Ceramics Membrane

    Veteksemicon SiC ceramics membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.

  • What are the differences between Isotropic Graphite and Siliconized Graphite?

    Graphite materials have a wide range of application scenarios. Among them, Isotropic Graphite and Siliconized Graphite are the two main different types of graphite materials, and their characteristics, application scenarios and advantages are significantly different. This blog will conduct a comparative analysis from three aspects: structural characteristics, application scenarios and product advantages.

  • Welcome customers to visit Veteksemicon's SiC Coating/ TaC Coating and Epitaxy Process Factory

    On September 5, VeTek Semiconductor's customers visited the SiC Coating and TaC Coating factories and reached further agreements on the latest Epitaxial Process solutions.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Chip Manufacturing: Atomic Layer Deposition (ALD)

    In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

Related Search

ICP Etching CarrierSiC Coated ICP Etching plateSiC ICP Etching Plate

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept