Rapid Thermal Annealing Susceptor

VeTek Semiconductor Rapid Thermal Annealing Susceptor is with high quality and long lifetime,welcome to inquiry us.

The Rapid Thermal Anneal (RTA) is a crucial subset of Rapid Thermal Processing used in semiconductor device fabrication. It involves the heating of individual wafers to modify their electrical properties through various targeted heat treatments. The RTA process enables the activation of dopants, alteration of film-to-film or film-to-wafer substrate interfaces, densification of deposited films, modification of grown film states, repair of ion implantation damage, dopant movement, and driving dopants between films or into the wafer substrate.

VeTek Semiconductor product, Rapid Thermal Annealing Susceptor, plays a vital role in the RTP process. It is constructed using high-purity graphite material with a protective coating of inert silicon carbide (SiC). The SiC-coated silicon substrate can withstand temperatures up to 1100°C, ensuring reliable performance even under extreme conditions. The SiC coating provides excellent protection against gas leakage and particle shedding, ensuring the longevity of the product.

To maintain precise temperature control, the chip is encapsulated between two high-purity graphite components coated with SiC. Accurate temperature measurements can be obtained through integrated high-temperature sensors or thermocouples in contact with the substrate.

Basic physical properties of CVD SiC coating:

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Overview of the semiconductor chip epitaxy industry chain: