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In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

High-purity quartz materials play a vital role in the semiconductor industry. Their superior high-temperature resistance, corrosion resistance, thermal stability, and light transmission properties make them critical consumables. Quartz products are used for components in both high-temperature and low-temperature zones of wafer production, ensuring the stability and cleanliness of the manufacturing process.

Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

The Dechuck principle of the Electrostatic Chuck is a key part of its workflow that involves electrostatic force elimination and wafer release mechanisms.

​Silicon carbide (SiC) PVT growth involves severe thermal cycling (room temperature above 2200 ℃). The enormous thermal stress generated between the coating and the graphite substrate due to the mismatch in coefficients of thermal expansion (CTE) is the core challenge determining coating lifetime and application reliability.