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  • CVD TaC Coating Carrier

    CVD TaC Coating Carrier

    CVD TaC Coating carrier is mainly designed for the epitaxial process of semiconductor manufacturing. CVD TaC Coating carrier’s Ultra-high melting point, excellent corrosion resistance, and outstanding thermal stability determine the indispensability of this product in semiconductor epitaxial process. Welcome your further inquiry.
  • High-purity Quartz Bath

    High-purity Quartz Bath

    In the critical steps of wafer cleaning, etching, and wet etching, high-purity quartz bath is more than just a container; it's the first line of defense for process success. Metal ion contamination, thermal shock cracking, chemical attack, and particle residue are hidden causes of yield fluctuations. Veteksemi is deeply rooted in semiconductor-grade quartz. Every quartz bath we manufacture is designed to provide uncompromising reliability and cleanliness for your cutting-edge processes.
  • EPI susceptor

    EPI susceptor

    The EPI susceptor is designed for the demanding epitaxial equipment applications. Its high-purity silicon carbide (SiC) coated graphite structure offers excellent heat resistance, uniform thermal uniformity for consistent epitaxial layer thickness and resistance, and long-lasting chemical resistance. We look forward to cooperating with you.
  • CVD Silicon Carbide(SiC) Coated RTP Susceptor

    CVD Silicon Carbide(SiC) Coated RTP Susceptor

    The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.
  • Aixtron G10 Solid SiC planetary reactor components

    Aixtron G10 Solid SiC planetary reactor components

    VeTek Semiconductor’s Solid SiC accessories for the Aixtron G10-SiC platform are high-purity, fully dense silicon carbide components designed for the demanding thermal and chemical environment of SiC epitaxial growth. These parts deliver outstanding high-temperature stability, chemical resistance, and ultra-low particle generation, supporting the high-throughput 9×150 mm / 6×200 mm planetary reactor configuration used in power device manufacturing.
  • TaC Coating Crucible

    TaC Coating Crucible

    As a professional TaC Coating Crucible Supplier and Manufacturer in China, VeTek Semiconductor's TaC Coating Crucible plays an irreplaceable role in the Single crystal growth process of semiconductors with its excellent thermal conductivity, outstanding chemical stability and enhanced corrosion resistance. Welcome your further inquiries.

  • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

    Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

  • Summary of Silicon Carbide (SiC) Manufacturing Process

    Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • What is step-controlled epitaxial growth？

  • How much do you know about sapphire?

    This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

  • Material of silicon carbide epitaxy

    Silicon carbide is reshaping the semiconductor industry for power and high-temperature applications, with its comprehensive properties, from epitaxial substrates to protective coatings to electric vehicles and renewable energy systems.

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