Web Menu

Product Search

Language

Products

China monocrystalline silicon Manufacturer, Supplier, Factory

Our development depends on the advanced equipment, excellent talents and continuously strengthened technology forces for monocrystalline silicon, PECVD (Plasma-Enhanced Chemical Vapor Deposition), Graphite boat, Silicon wafers, Isostatic graphite, Presently, we are looking forward to even larger cooperation with overseas clients based on mutual benefits. Make sure you come to feel no cost to make contact with us for more information.
monocrystalline silicon, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to provide our customers more profit, and looking forward to more chance to make business.

Related Products

Hot Products

  • Silicon Carbide Wafer Boat

    Silicon Carbide Wafer Boat

    VeTek Semiconductor's high-purity Silicon Carbide Wafer Boat is made of extremely pure silicon carbide material with excellent thermal stability, mechanical strength and chemical resistance. High-purity Silicon Carbide Wafer Boat is used in hot zone applications in semiconductor manufacturing, especially in high-temperature environments, and plays an important role in protecting wafers, transporting materials and maintaining stable processes. VeTek Semiconductor will continue to work hard to innovate and improve the performance of high-purity Silicon Carbide Wafer Boat to meet the evolving needs of semiconductor manufacturing. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth, is a new high purity raw material developed by Vetek Semiconductor. It has a high input-output ratio and can grow high-quality, large-size silicon carbide single crystals, which is a second-generation material to replace the powder used in the market today. Welcome to discuss technical issues.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    VeTek Semiconductor’s TaC Coated Graphite Susceptor uses chemical vapor deposition(CVD) method to prepare tantalum carbide coating on the surface of graphite parts. This process is the most mature and has the best coating properties. TaC Coated Graphite Susceptor can extend the service life of graphite components, inhibit the migration of graphite impurities, and ensure the quality of epitaxy.We are looking forward to your inquiry.
  • CVD SiC Focus Ring

    CVD SiC Focus Ring

    VeTek Semiconductor is a leading domestic manufacturer and supplier of CVD SiC focus rings, dedicated to providing high-performance, high-reliability product solutions for the semiconductor industry. VeTek Semiconductor's CVD SiC focus rings use advanced chemical vapor deposition (CVD) technology, have excellent high temperature resistance, corrosion resistance and thermal conductivity, and are widely used in semiconductor lithography processes. Your inquiries are always welcome.
  • SiC Coating Wafer Carrier

    SiC Coating Wafer Carrier

    As a professional SiC coating wafer carrier manufacturer and supplier, Vetek Semiconductor's SiC coating wafer carriers are mainly used to improve the growth uniformity of epitaxial layer, ensuring their stability and integrity in high temperature and corrosive environments.
  • CVD TaC Coated Graphite Ring

    CVD TaC Coated Graphite Ring

    The CVD TaC Coated Graphite Ring by Veteksemicon is engineered to meet the extreme demands of semiconductor wafer processing. Utilizing Chemical Vapor Deposition (CVD) technology, a dense and uniform Tantalum Carbide (TaC) coating is applied to high-purity graphite substrates, achieving exceptional hardness, wear resistance, and chemical inertness. In semiconductor fabrication, the CVD TaC Coated Graphite Ring is widely used in MOCVD, etching, diffusion, and epitaxial growth chambers, serving as a key structural or sealing component for wafer carriers, susceptors, and shielding assemblies. Looking forward to your further consultation.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • Diamond - the future star of semiconductors

    Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

  • Can Silicon Carbide Ceramics Withstand Extreme Industrial Environments

    At VeTek Semiconductor, we've specialized in pushing the boundaries of what's possible with advanced Silicon Carbide Ceramics, developing grades specifically engineered to thrive where other materials falter.

  • What is semiconductor epitaxy process?

    It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

  • The challenges of silicon carbide crystal growth furnaces

    Silicon carbide (SiC) crystal growth furnaces play a vital role in producing high-performance Sic wafers for next-generation semiconductor devices. However, the process of growing high-quality SiC crystals presents significant challenges. From managing extreme thermal gradients to reducing crystal defects, ensuring uniform growth, and controlling production costs, each step requires advanced engineering solutions. This article will analyze the technical challenges of SIC crystal growth furnaces from multiple perspectives.

Related Search

Crucible for Monocrystalline SiliconHigh-purity Monocrystalline SiliconMonocrystalline silicon epitaxial trayMonocrystalline silicon epitaxyMonocrystalline silicon focusing ringMonocrystalline Silicon IngotsQuartz Crucible for Monocrystalline SiliconSiC coating Monocrystalline silicon epitaxial tray

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept