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We believe that prolonged time period partnership is really a result of top of the range, benefit added provider, prosperous knowledge and personal contact for Veeco systems, Aixtron G5 MOCVD system, Nuflare systems, TEL CVD systems, CVD SiC coating, we could solve our customer problems asap and do the profit for our customer. For those who need superior provider and excellent , pls choose us , thanks !
Veeco systems, We have now a dedicated and aggressive sales team, and many branches, catering to our main customers. We have been looking for long-term business partnerships, and ensure our suppliers that they will surely benefit in both short and long run.

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    SiC coated graphite susceptor for ASM

    Veteksemicon SiC coated graphite susceptor for ASM is a core carrier component in semiconductor epitaxial processes. This product utilizes our proprietary pyrolytic silicon carbide coating technology and precision machining processes to ensure superior performance and an ultra-long lifespan in high-temperature and corrosive process environments. We deeply understand the stringent requirements of epitaxial processes on substrate purity, thermal stability, and consistency, and are committed to providing customers with stable, reliable solutions that enhance overall equipment performance.
  • CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth, is a new high purity raw material developed by Vetek Semiconductor. It has a high input-output ratio and can grow high-quality, large-size silicon carbide single crystals, which is a second-generation material to replace the powder used in the market today. Welcome to discuss technical issues.
  • SiC Coating Inlet Ring

    SiC Coating Inlet Ring

    Vetek Semiconductor excels in collaborating closely with clients to craft bespoke designs for SiC Coating Inlet Ring tailored to specific needs. These SiC Coating Inlet Ring are meticulously engineered for diverse applications such as CVD SiC equipment and Silicon carbide epitaxy. For tailored SiC Coating Inlet Ring solutions, do not hesitate to reach out to Vetek Semiconductor for personalized assistance.
  • High Purity Silicon Carbide (SiC) Powder

    High Purity Silicon Carbide (SiC) Powder

    VeTek Semiconductor High Purity Silicon Carbide (SiC) Powder is specially developed for SiC crystal growth, semiconductor materials, and advanced ceramic applications. Through advanced purification technology and strict quality control, our SiC powder offers ultra-low impurity levels, stable particle distribution, and excellent consistency for demanding manufacturing processes.
  • High purity graphite soft felt

    High purity graphite soft felt

    VeTek Semiconductor is a leading manufacturer and supplier of high purity graphite soft felt from China. The high purity graphite soft felt is widely used in semiconductor, photovoltaic and other fields. Whether vacuum high pressure gas quenching furnace, vacuum sintering furnace, single crystal silicon furnace, silicon carbide growth furnace and other furnace types, can provide excellent thermal insulation performance. According to user requirements, we can process various shapes of high purity graphite soft felt, the surface of the product can also be coating treatment. Looking forward to your inquiry.
  • SiC Crystal Growth New Technology

    SiC Crystal Growth New Technology

    Vetek Semiconductor's ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) is recommanded to be used as a source material for growing silicon carbide crystals by physical vapor transport (PVT). In SiC Crystal Growth New Technology, the source material is loaded into a crucible and sublimated onto a seed crystal. Use the high purity CVD-SiC blocks to be as a source for growing SiC crystals. Welcome to establish a partnership with us.

  • Chip Manufacturing: Atomic Layer Deposition (ALD)

    In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

  • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

    This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

  • Intelligent Cutting Technology for Cubic Silicon Carbide Wafers

    Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • What is SiC-coated graphite susceptor ?

    This blog takes "What is SiC-coated graphite susceptor?" as its theme, and discusses it from the perspectives of Epitaxial layer and its equipment, Importance of SiC coated graphite susceptor in CVD equipment, SiC Coating technology, Market competition and Vetek Semiconductor’s technological innovation.

  • How Is CVD Silicon Carbide Coating Deposited on Graphite?

    CVD silicon carbide coating is produced by depositing a dense SiC layer onto high-purity graphite through controlled gas-phase and surface reactions. This article explains substrate preparation, MTS-based CVD growth, nucleation and mass transfer, coating thickness and uniformity, SiC/graphite interface stress, common defects and semiconductor-grade inspection. It also shows why process parameters and component geometry must be engineered together for susceptors and wafer carriers used in epitaxy and MOCVD.

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