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China Third Generation Semiconductor Manufacturer, Supplier, Factory

The key to our success is "Good Product Quality, Reasonable Value and Efficient Service" for Third Generation Semiconductor, Porous Graphite Materials for Single Crystal SiC Growth, High-purity Porous Graphite Material, Porous Graphite, Semiconductor, We warmly welcome all intrigued shoppers to make contact with us for more data.
Third Generation Semiconductor, At Current, our solutions have been exported to more than sixty countries and different regions, such as Southeast Asia, America, Africa, Eastern Europe, Russia, Canada etc. We sincerely hope to establish wide contact with all potential customers both in China and the rest part of the world.

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  • High Purity Graphite Paper

    High Purity Graphite Paper

    The high purity graphite paper provided by VeTek Semiconductor is a reliable and efficient sealing solution. High-purity graphite paper is a sealing material made of advanced graphite materials with excellent performance and reliability. It has excellent high-temperature resistance and can withstand sealing requirements under extreme temperature conditions. Welcome to inquire at any time. We look forward to becoming your long-term partner in China.
  • TaC Coating Ring

    TaC Coating Ring

    TaC Coating Ring is a high-performance component designed for use in semiconductor processes, VeTek semiconductor TaC Coating Ring has high thermal stability, resistance to chemical corrosion, and excellent mechanical strength and is specifically used to hold and support SiC wafers during the etching process, where precise control and durability are essential for achieving high-quality wafers. we are looking forward to your further consultation.
  • MAX Phase Nanopowder

    MAX Phase Nanopowder

    Veteksemi’s Semiconductor MAX phase nanopowder offers exceptional thermal and electrical properties, ideal for advanced electronics and materials science applications. With superior oxidation resistance and high-temperature stability, Veteksemi's nanopowder is the perfect solution for innovative semiconductor technologies.
  • Silicon-based GaN Epitaxial Susceptor

    Silicon-based GaN Epitaxial Susceptor

    The silicon-based GaN epitaxial Susceptor is the core component required for GaN epitaxial production. Veteksemicon silicon-based GaN epitaxial Susceptor is specially designed for silicon-based GaN epitaxial reactor system, with advantages such as high purity, excellent high temperature resistance and corrosion resistance. Welcome your further consultation.
  • Silicon Carbide Ceramic Coating

    Silicon Carbide Ceramic Coating

    As a professional Silicon Carbide Ceramic Coating manufacturer and supplier in China, Vetek Semiconductor's Silicon Carbide Ceramic Coating is widely used on key components of semiconductor manufacturing equipment, especially when CVD and PECVD processes are involved. Welcome your inquiry.
  • Plasma Etching Focus Ring

    Plasma Etching Focus Ring

    An important component used in the wafer fabrication etching process is the plasma etching focus ring, whose function is to hold the wafer in place to maintain plasma density and prevent contamination of the wafer sides.Vetek semiconductor provide plasma etching focus ring with different material like monocrystalline silicon, silicon carbide, boron carbide and other ceramic materials.

  • What is Silicon Carbide Crystal Growth?

    This blog takes "What is Silicon Carbide Crystal Growth?" as its theme and provides a detailed analysis from four dimensions: The Principle of Silicon Carbide Crystal Growth, The Crystal Structure of SiC, Physical Vapor Transport Method (PVT) and the Step Flow Growth to Grow Single Crystal.

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    This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

  • CVD Technology Innovation Behind the Nobel Prize

    This blog discusses the specific applications of artificial intelligence in the field of CVD from two aspects: The Significance and Challenges of Chemical Vapor Deposition (CVD) Technology in Physics and CVD Technology and Machine Learning.

  • Based on 8-inch silicon carbide single crystal growth furnace technology

    Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

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