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    Vitreous Carbon Coated Graphite Crucible for E-beam Gun

    VeTek Semiconductor is a leading supplier of customized Vitreous Carbon Coated Graphite Crucible for E-beam Gun in China, specializing in advanced materials for many years. Our Vitreous Carbon Coated Graphite Crucible is specifically designed for E-beam Gun, ensuring excellent performance. Made from ultra-pure imported SGL graphite, it offers reliability and durability. Visit our factory in China to explore deep cooperation.
  • Porous SiC Ceramic Plate

    Porous SiC Ceramic Plate

    Our porous SiC ceramic plates are porous ceramic materials made of silicon carbide as the main component and processed by special processes. They are indispensable materials in semiconductor manufacturing, chemical vapor deposition (CVD) and other processes.
  • Physical Vapor Deposition

    Physical Vapor Deposition

    Vetek semiconductor Physical Vapor Deposition (PVD) is an advanced process technology widely used in surface treatment and thin film preparation. PVD technology uses physical methods to directly transform materials from solid or liquid to gas and form a thin film on the surface of the target substrate. This technology has the advantages of high precision, high uniformity and strong adhesion, and is widely used in semiconductors, optical devices, tool coatings and decorative coatings. Welcome to discuss with us!
  • Semiconductor Susceptor Block SiC Coated

    Semiconductor Susceptor Block SiC Coated

    VeTek Semiconductor's Semiconductor susceptor block SiC coated is a highly reliable and durable device. It is designed to withstand high temperatures and harsh chemical environments while maintaining stable performance and a long lifespan. With its excellent process capabilities, the Semiconductor Susceptor Block SiC Coated reduces the frequency of replacement and maintenance, thus improving production efficiency. We look forward to the opportunity to collaborate with you.Welcome to consult at any time.
  • SiC coating halfmoon graphite parts

    SiC coating halfmoon graphite parts

    As a professional semiconductor manufacturer and supplier, VeTek Semiconductor can provide a variety of graphite components required for SiC epitaxial growth systems. These SiC coating halfmoon graphite parts are designed for the gas inlet section of the epitaxial reactor and play a vital role in optimizing the semiconductor manufacturing process. VeTek Semiconductor always strives to provide customers with the best quality products at the most competitive prices. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • CVD SiC Coating Wafer Epi Susceptor

    CVD SiC Coating Wafer Epi Susceptor

    VeTek Semiconductor CVD SiC coating wafer Epi susceptor is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing VeTek Semiconductor's CVD SiC coating wafer Epi susceptor, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. Welcome your further inquiries.

  • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

    VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Veteksemicon shines at the 2025 Shanghai SEMICON International Exhibition

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  • Silicon(Si) epitaxy preparation technology

    Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

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