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China SiC Furnace Tube Manufacturer, Supplier, Factory

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SiC Furnace Tube, We have now established long-term, stable and good business relationships with many manufacturers and wholesalers around the world. Currently, we are looking forward to even greater cooperation with overseas customers based on mutual benefits. Make sure you feel free to contact us for more details.

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  • LPE SI EPI Susceptor Set

    LPE SI EPI Susceptor Set

    Flat susceptor and barrel susceptor are the main shape of epi susceptors.VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4" wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
  • Solid SiC Disc-shaped Shower Head

    Solid SiC Disc-shaped Shower Head

    VeTek Semiconductor is a leading semiconductor equipment manufacturer in China and a professional manufacturer and supplier of Solid SiC Disc-shaped Shower Head. Our Disc shape Shower Head is widely used in thin film deposition production such as CVD process to ensure uniform distribution of reaction gas and is one of the core components of CVD furnace.
  • Porous SiC Ceramic Plate

    Porous SiC Ceramic Plate

    Our porous SiC ceramic plates are porous ceramic materials made of silicon carbide as the main component and processed by special processes. They are indispensable materials in semiconductor manufacturing, chemical vapor deposition (CVD) and other processes.
  • Ion Beam Sputter sources grid

    Ion Beam Sputter sources grid

    Ion beam is mainly used for ion etching, ion coating and plasma injection. The role of the Ion Beam Sputter sources grid is to dissect the ions and accelerate them to the required energy. Vetek Semiconductor provides high purity graphite ion beam Ion Beam Sputter sources grid for optical lens ion beam polishing, semiconductor wafer modification, etc. Welcome to inquire about customized products.
  • TaC coated wafer susceptor

    TaC coated wafer susceptor

    VeTek Semiconductor TaC Coated Wafer Susceptor is a graphite tray coated with tantalum carbide for silicon carbide epitaxial growth to improve wafer quality and performance. VeTek is selected because of its advanced coating technology and durable solutions to ensure excellent SiC epitaxy results and extended susceptor life, welcome your further inquiries.
  • SiC Cantilever Paddle

    SiC Cantilever Paddle

    VeTek Semiconductor's SiC Cantilever Paddle is used in heat treatment furnaces for handling and supporting wafer boats. The high temperature stability and high thermal conductivity of SiC material ensure high efficiency and reliability in the semiconductor processing process. We are committed to providing high-quality products at competitive prices and look forward to becoming your long-term partner in China.

  • Uses of solid silicon carbide

    Solid silicon carbide (SiC) has become one of the key materials in semiconductor manufacturing due to its unique physical properties. The following is an analysis of its advantages and practical value based on its physical properties and its specific applications in semiconductor equipment (such as wafer carriers, shower heads, etching focus rings, etc.).

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

  • Characteristics of silicon epitaxy

    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

  • What are the differences between MBE and MOCVD technologies?

    This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

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