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We try for excellence, service the customers", hopes to be the most effective cooperation workforce and dominator company for staff, suppliers and shoppers, realizes price share and ongoing marketing for Semiconductor manufacturing processes, Isotropic Graphite, Special Graphite, Graphite Disc Susceptor, SiC coating, Welcome any within your inquiries and concerns for our products and solutions, we glance ahead to setting up a long-term enterprise partnership along with you within the close to potential. get hold of us today.
Semiconductor manufacturing processes, At Current, our solutions have been exported to more than sixty countries and different regions, such as Southeast Asia, America, Africa, Eastern Europe, Russia, Canada etc. We sincerely hope to establish wide contact with all potential customers both in China and the rest part of the world.

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    VeTek Semiconductor SiC Coated Graphite Barrel Susceptor is a high-performance wafer tray designed for semiconductor epitaxy processes, offering excellent thermal conductivity, high-temperature and chemical resistance, a high-purity surface, and customizable options to enhance production efficiency. Welcome your further inquiry.
  • SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers is one of the core components used in 6'' wafers epitaxial wafer processing. VeTek Semiconductor is currently a leading manufacturer and supplier of SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers in China. The SiC Coated Pancake Susceptor it provides has excellent characteristics such as high corrosion resistance, good thermal conductivity, and good uniformity. Looking forward to your inquiry.
  • SiC Diffusion Furnace Tube

    SiC Diffusion Furnace Tube

    As a leading manufacturer and supplier of diffusion furnace equipment in China, VeTek Semiconductor SiC Diffusion Furnace Tube has significantly high bending strength, excellent resistance to oxidation, corrosion resistance, high wear resistance, and excellent high-temperature mechanical properties. Making it an indispensable equipment material in diffusion furnace applications. VeTek Semiconductor is committed to manufacturing and supplying high-quality SiC Diffusion Furnace Tube, and welcomes your further inquiries.
  • High purity quartz diffusion Tube

    High purity quartz diffusion Tube

    In process of Semiconductor oxidation and difffusion, high purity quartz diffusion tube is widely used. As a leading manufacturer and supplier of High purity quartz Diffusion Tube in China, VeTek Semiconductor can provide you with high-quality products. Looking forward to your inquiry.
  • High Purity Quartz Crucible

    High Purity Quartz Crucible

    High purity quartz crucible is essential core component in advanced semiconductor manufacturing processes, especially for applications that require extremely high thermal stability, chemical purity, and dimensional accuracy. Veteksemicon offers superior high purity quartz crucibles designed to meet the extreme demands of semiconductor processes.
  • Silicon Carbide Ceramic Coating

    Silicon Carbide Ceramic Coating

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  • Why is tantalum carbide (TaC) coating superior to silicon carbide (SiC) coating in SiC single crystal growth? - VeTek semiconductor

    From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

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    In semiconductor manufacturing, various types of semiconductor ceramic components products are needed. These products are used in different production scenarios due to their different characteristics, so as to play their corresponding functions. They are indispensable products in the semiconductor processing industry.

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    Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

  • Research on SIC Wafer Carrier Technology

    ​SiC wafer carriers, as key consumables in the third-generation semiconductor industry chain, their technical characteristics directly affect the yield of epitaxial growth and device manufacturing. With the surging demand for high-voltage and high-temperature devices in industries such as 5G base stations and new energy vehicles, the research and application of SiC wafer carriers are now facing significant development opportunities.

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  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

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