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  • Ultra Pure Silicon Carbide Powder for Crystal Growth

    Ultra Pure Silicon Carbide Powder for Crystal Growth

    VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Ultra Pure Silicon Carbide Powder for Crystal Growth. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide. Welcome to inquire and cooperate with us!
  • CVD TaC coated three-petal guide ring

    CVD TaC coated three-petal guide ring

    VeTek Semiconductor has experienced many years of technological development and has mastered the leading process technology of CVD TaC coating. CVD TaC coated three-petal guide ring is one of VeTek Semiconductor's most mature CVD TaC coating products and is an important component for preparing SiC crystals by PVT method. With the help of VeTek Semiconductor, I believe your SiC crystal production will be smoother and more efficient.
  • Aixtron G5 MOCVD Susceptors

    Aixtron G5 MOCVD Susceptors

    Aixtron G5 MOCVD system consists of graphite material, silicon carbide coated graphite, quartz, rigid felt material, etc. Vetek Semiconductor can customize and manufacture whole set of components for this system. We have been specialized in semiconductor graphite and quartz parts for many years.This Aixtron G5 MOCVD Susceptors kit is a versatile and efficient solution for semiconductor manufacturing with its optimal size, compatibility, and high productivity.Welcome to inquiry us.
  • TaC coated ring for PVT growth of SiC single crystal

    TaC coated ring for PVT growth of SiC single crystal

    As one of the leading TaC coating product suppliers in China, VeTek Semiconductor is able to provide customers with high-quality TaC coating customized parts. TaC coated ring for PVT growth of SiC single crystal is one of VeTek Semiconductor's most outstanding and mature products. It plays an important role in the PVT growth of SiC crystal process and can help customers grow high-quality SiC crystals. Looking forward to your inquiry.
  • SiC Membrane

    SiC Membrane

    Veteksemicon SiC membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.
  • High purity quartz diffusion Tube

    High purity quartz diffusion Tube

    In process of Semiconductor oxidation and difffusion, high purity quartz diffusion tube is widely used. As a leading manufacturer and supplier of High purity quartz Diffusion Tube in China, VeTek Semiconductor can provide you with high-quality products. Looking forward to your inquiry.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Why is tantalum carbide (TaC) coating superior to silicon carbide (SiC) coating in SiC single crystal growth? - VeTek semiconductor

    From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

  • What is Silicon Carbide Crystal Growth?

    This blog takes "What is Silicon Carbide Crystal Growth?" as its theme and provides a detailed analysis from four dimensions: The Principle of Silicon Carbide Crystal Growth, The Crystal Structure of SiC, Physical Vapor Transport Method (PVT) and the Step Flow Growth to Grow Single Crystal.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Exploratory application of 3D printing technology in the semiconductor industry

    In an era of rapid technological development, 3D printing, as an important representative of advanced manufacturing technology, is gradually changing the face of traditional manufacturing. With the continuous maturity of technology and the reduction of costs, 3D printing technology has shown broad application prospects in many fields such as aerospace, automobile manufacturing, medical equipment, and architectural design, and has promoted the innovation and development of these industries.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

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