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Semiconductor Manufacturer, Our company's main merchandise are widely used all over the world; 80% of our products exported to the United States, Japan, Europe and other markets. All stuff sincerely welcome guests come to visit our factory.

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  • Silicon Carbide Epitaxy Wafer Carrier

    Silicon Carbide Epitaxy Wafer Carrier

    VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.Welcome to consult at any time.
  • LED Epitaxy susceptor

    LED Epitaxy susceptor

    VeTek Semiconductor's LED Epitaxy susceptor is designed for blue and green LED epitaxial manufacturing. It combines silicon carbide coating and SGL graphite, and has high hardness, low roughness, good thermal stability and excellent chemical stability. LED Epitaxy susceptor is one of VeTek Semiconductor's most outstanding products. We look forward to your inquiry.
  • High Purity Quartz Etch Ring

    High Purity Quartz Etch Ring

    Dry plasma etch chambers rely on precise boundary control around the wafer to keep plasma density, gas flow, and electric-field distribution stable. VeTek Semiconductor High Purity Quartz Etch Rings are semiconductor-grade chamber components made from dehydroxylated fused quartz. They define the process zone at the wafer edge, help confine plasma, smooth gas flow, and protect the wafer periphery—supporting more uniform etch rates and cleaner profiles across 2–12 inch silicon, SiC, GaN, and sapphire wafers.
  • CVD SiC Coating Protector

    CVD SiC Coating Protector

    Vetek Semiconductor's CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.
  • High Purity Quartz Wafer Carrier

    High Purity Quartz Wafer Carrier

    VeTek Semiconductor’s High Purity Quartz Wafer Carriers are precision-engineered semiconductor-grade fixtures for stable wafer handling in high-temperature thermal processing, thin-film deposition, wet processes, and vacuum applications. Manufactured from semiconductor-grade dehydroxylated fused quartz (JGS2 equivalent), these wafer carriers deliver ultra-high purity, excellent thermal shock resistance, chemical inertness, low outgassing, and high flatness—ensuring reliable, contamination-free support for 2–12 inch silicon, SiC, GaN, and sapphire substrates.
  • High Purity Quartz Wafer Boat For TEL

    High Purity Quartz Wafer Boat For TEL

    VETEK High Purity Quartz Wafer Boat for TEL semiconductor equipment is manufactured from semiconductor-grade quartz material and designed for wafer handling in high-temperature processes such as diffusion, oxidation, annealing, and CVD. With excellent thermal stability, chemical resistance, and low contamination characteristics, it provides reliable wafer support for semiconductor manufacturing applications.

  • Exploratory application of 3D printing technology in the semiconductor industry

    In an era of rapid technological development, 3D printing, as an important representative of advanced manufacturing technology, is gradually changing the face of traditional manufacturing. With the continuous maturity of technology and the reduction of costs, 3D printing technology has shown broad application prospects in many fields such as aerospace, automobile manufacturing, medical equipment, and architectural design, and has promoted the innovation and development of these industries.

  • How Is CVD Silicon Carbide Coating Deposited on Graphite?

    CVD silicon carbide coating is produced by depositing a dense SiC layer onto high-purity graphite through controlled gas-phase and surface reactions. This article explains substrate preparation, MTS-based CVD growth, nucleation and mass transfer, coating thickness and uniformity, SiC/graphite interface stress, common defects and semiconductor-grade inspection. It also shows why process parameters and component geometry must be engineered together for susceptors and wafer carriers used in epitaxy and MOCVD.

  • Material of silicon carbide epitaxy

    Silicon carbide is reshaping the semiconductor industry for power and high-temperature applications, with its comprehensive properties, from epitaxial substrates to protective coatings to electric vehicles and renewable energy systems.

  • How Can a Glassy Carbon Coated Graphite Crucible Improve High-Temperature Semiconductor Material Processing

    A Glassy Carbon Coated Graphite Crucible is an advanced thermal processing component designed for demanding applications such as semiconductor manufacturing, crystal growth, vacuum heat treatment, and high-temperature material research. This article explains its structure, advantages, applications, and selection considerations. VeTek Semiconductor provides high-performance crucible solutions that combine glassy carbon coating technology with precision graphite manufacturing to meet the strict requirements of modern industries.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

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