SiC coating Monocrystalline silicon epitaxial tray

VeTek semiconductor’s SiC coating Monocrystalline silicon epitaxial tray is specially designed for monocrystalline silicon epitaxial growth and plays an important role in the industrial application of monocrystalline silicon epitaxy and related semiconductor devices. SiC coating not only significantly improves the temperature resistance and corrosion resistance of the tray, but also ensures long-term stability and excellent performance in extreme environments.

Advantages of SiC coating

●  High thermal conductivity: SiC coating greatly improves the thermal management capability of the tray and can effectively disperse the heat generated by high-power devices.

●  Corrosion resistance: SiC coating performs well in high temperature and corrosive environments, ensuring long-term service life and reliability.

●  Surface uniformity: Provides a flat and smooth surface, effectively avoiding manufacturing errors caused by surface unevenness and ensuring the stability of epitaxial growth.

According to research, when the pore size of the graphite substrate is between 100 and 500 nm, a SiC gradient coating can be prepared on the graphite substrate, and the SiC coating has a stronger anti-oxidation ability. the oxidation resistance of the SiC coating on this graphite (triangular curve) is much stronger than that of other specifications of graphite, Suitable for the growth of single crystal silicon epitaxy. VeTek Semiconductor's SiC coating Monocrystalline silicon epitaxial tray uses SGL graphite as the graphite substrate, which is able to achieve such performance.

VeTek Semiconductor's SiC coating Monocrystalline silicon epitaxial tray uses the best graphite materials and the most advanced SiC coating processing technology. Most importantly, no matter what product customization needs customers have, we can do our best to meet.

Basic physical properties of CVD SiC coating

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