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China silicon epitaxial growth Manufacturer, Supplier, Factory

"Based on domestic market and expand abroad business" is our progress strategy for silicon epitaxial growth, SiC coating, Monocrystalline silicon epitaxial tray, SiC coating Monocrystalline silicon epitaxial tray, graphite substrate, We're going to provide high-quality merchandise and excellent products and services at competitive costs. Start benefiting from our comprehensive products and services by contacting us today.
silicon epitaxial growth, We've got more than 200 staff including experienced managers, creative designers, sophisticated engineers and skilled workers. Through hard work of all employees for the past 20 years own company grew stronger and stronger. We always apply the "client first" principle. We also always fulfill all contracts to the point and therefore enjoy excellent reputation and trust among our customers. You are very welcome to personally visit our company.We hope to start a business partnership on the basis of mutual benefit and successful development . For more information make sure you do no hesitate to contact us.

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  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • Large sized resistance heating SiC crystal growth furnace

    Large sized resistance heating SiC crystal growth furnace

    Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.
  • EPI Susceptor Parts

    EPI Susceptor Parts

    In the core process of silicon carbide epitaxial growth, Veteksemicon understands that susceptor performance directly determines the quality and production efficiency of the epitaxial layer. Our high-purity EPI susceptors, designed specifically for the SiC field, utilize a special graphite substrate and a dense CVD SiC coating. With their superior thermal stability, excellent corrosion resistance, and extremely low particle generation rate, they ensure unparalleled thickness and doping uniformity for customers even in harsh high-temperature process environments. Choosing Veteksemicon means choosing the cornerstone of reliability and performance for your advanced semiconductor manufacturing processes.
  • CVD TaC Coating Carrier

    CVD TaC Coating Carrier

    CVD TaC Coating carrier is mainly designed for the epitaxial process of semiconductor manufacturing. CVD TaC Coating carrier’s Ultra-high melting point, excellent corrosion resistance, and outstanding thermal stability determine the indispensability of this product in semiconductor epitaxial process. Welcome your further inquiry.
  • TaC Coating Rotation Susceptor

    TaC Coating Rotation Susceptor

    As a professional manufacturer, innovator and leader of TaC Coating Rotation Susceptor products in China. VeTek Semiconductor TaC Coating Rotation Susceptor is usually installed in chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) equipment to support and rotate wafers to ensure uniform material deposition and efficient reaction. It is a key component in semiconductor processing. Welcome your further consultation.
  • ALD Susceptor

    ALD Susceptor

    VeTek Semiconductor is a China professional ALD Susceptor manufacturer. Vetek jointly developed and produced SiC-coated ALD planetary bases with ALD system manufacturers to meet the high requirements of the ALD process. Welcome your consultation.

  • Why is CO₂ Introduced During the Wafer Dicing Process?

    Introducing CO₂ into the dicing water during wafer cutting is an effective process measure to suppress static charge buildup and lower contamination risk, thereby improving dicing yield and long-term chip reliability.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • How thin can the Taiko process make silicon wafers?

    The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • VETEK to Participate in SEMICON Europa 2025 in Munich, Germany

    In 2025, the European semiconductor industry will once again meet at the largest semiconductor trade fair SEMICON Europa in Munich from November 18-21

  • What challenges does the CVD TaC coating process for SiC single crystal growth face in semiconductor processing?

    The article analyzes the specific challenges faced by the CVD TaC coating process for SiC single crystal growth during semiconductor processing, such as material source and purity control, process parameter optimization, coating adhesion, equipment maintenance and process stability, environmental protection and cost control, as well as the corresponding industry solutions.

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