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China Porous Ceramic Disc Manufacturer, Supplier, Factory

We believe that extensive time period partnership can be a result of top quality, price added support, loaded encounter and personal contact for Porous Ceramic Disc, Porous SiC Ceramic Plate, Porous SiC Ceramic Disc, SiC Ceramic Plate, Porous Ceramic Plate, Accurate process devices, Advanced Injection Molding Equipment, Equipment assembly line, labs and software advancement are our distinguishing feature.
Porous Ceramic Disc, Our company always provides good quality and reasonable price for our customers. In our efforts, we already have many shops in Guangzhou and our solutions have won praise from customers worldwide. Our mission has always been simple: To delight our customers with best quality hair solutions and deliver on time. Welcome new and old customers to contact us for the future long term business relationships.

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  • CVD SiC Coating Nozzle

    CVD SiC Coating Nozzle

    CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications. Welcome your further inquiry.
  • Wafer Carrier Tray

    Wafer Carrier Tray

    Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
  • CVD SiC Coated RTP Susceptor

    CVD SiC Coated RTP Susceptor

    The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.
  • CVD Tantalum Carbide(TaC) Coated Susceptor

    CVD Tantalum Carbide(TaC) Coated Susceptor

    The VETEK CVD TaC Coated Susceptor combines a high-purity isostatic graphite substrate with a dense CVD tantalum carbide (TaC) coating to deliver exceptional thermal stability, corrosion resistance, and low particle generation for demanding semiconductor epitaxy. Designed for SiC, GaN, and AlN epitaxial growth, it minimizes contamination, improves wafer temperature uniformity, and extends component service life in high-temperature MOCVD and CVD processes.
  • SiC Wafer Boat

    SiC Wafer Boat

    The SiC wafer boat is used to carry the wafer,mainly for the oxidation and diffusion process, to ensure that the temperature can be evenly distributed on the wafer surface. The high temperature stability and high thermal conductivity of SiC materials ensure efficient and reliable semiconductor processing. Vetek semiconductor is committed to providing quality products at competitive prices.
  • CVD SiC Focus Ring

    CVD SiC Focus Ring

    VeTek Semiconductor is a leading domestic manufacturer and supplier of CVD SiC focus rings, dedicated to providing high-performance, high-reliability product solutions for the semiconductor industry. VeTek Semiconductor's CVD SiC focus rings use advanced chemical vapor deposition (CVD) technology, have excellent high temperature resistance, corrosion resistance and thermal conductivity, and are widely used in semiconductor lithography processes. Your inquiries are always welcome.
  • Related Blog
  • Reviews

  • TaC Coating: The Gatekeeper of Yield for 8-inch Silicon Carbide PVT Epitaxy

    8-inch SiC is now in volume production, but wafer yield — not capacity — separates the winners. This guide explains why TaC coating on graphite hot-zone parts decides yield, and how to qualify a supplier.

  • What is the temperature gradient of the thermal field of a single crystal furnace?

    The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

  • The Problems in the Etching Process

    Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

  • What Makes a High-Purity Quartz Bath Essential for Advanced Semiconductor Processes

    In semiconductor, solar cell, and microelectronics manufacturing, precision wet processing like wafer cleaning, etching, and surface preparation demand materials and equipment that ensure ultra-high purity, thermal stability and corrosion resistance. A High-Purity Quartz Bath provides these attributes with synthetic fused quartz construction, making it a cornerstone of modern fabrication environments.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • Based on 8-inch silicon carbide single crystal growth furnace technology

    Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

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