Porous SiC Ceramic Plate

Porous SiC ceramic plate is a porous structure ceramic material made of silicon carbide as the main component and combined with a special sintering process. Its porosity is adjustable (usually 30%-70%), the pore size distribution is uniform, it has excellent high temperature resistance, chemical stability and excellent gas permeability, and is widely used in semiconductor manufacturing, chemical vapor deposition (CVD), high temperature gas filtration and other fields.

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Porous SiC ceramic Disc Excellent physical properties

● Extreme high temperature resistance:

The melting point of SiC ceramics is as high as 2700°C, and it can still maintain structural stability above 1600°C, far exceeding traditional alumina ceramics (about 2000°C), especially suitable for semiconductor high temperature processes.

● Excellent thermal management performance:

✔ High thermal conductivity: The thermal conductivity of dense SiC is about 120 W/(m·K). Although the porous structure slightly reduces the thermal conductivity, it is still significantly better than most ceramics and supports efficient heat dissipation.

✔ Low thermal expansion coefficient (4.0×10⁻⁶/°C): almost no deformation at high temperature, avoiding device failure caused by thermal stress.

● Excellent chemical stability

Acid and alkali corrosion resistance (especially outstanding in HF environment), high temperature oxidation resistance, suitable for harsh environments such as etching and cleaning.

● Outstanding mechanical properties

✔ High hardness (Mohs hardness 9.2, second only to diamond), strong wear resistance.

✔ Bending strength can reach 300-400 MPa, and the pore structure design takes into account both lightweight and mechanical strength.

● Functionalized porous structure

✔ High specific surface area: Enhance gas diffusion efficiency, suitable as a reaction gas distribution plate.

✔ Controllable porosity: Optimize fluid penetration and filtration performance, such as uniform film formation in CVD process.

Specific role in semiconductor manufacturing

● High temperature process support and heat insulation

As a wafer support plate, it is used in high temperature equipment (>1200°C) such as diffusion furnaces and annealing furnaces to avoid metal contamination.

The porous structure has both insulation and support functions, reducing heat loss.

● Uniform gas distribution and reaction control

In chemical vapor deposition (CVD) equipment, as a gas distribution plate, the pores are used to uniformly transport reactive gases (such as SiH₄, NH₃) to improve the uniformity of thin film deposition.

In dry etching, the porous structure optimizes plasma distribution and improves etching accuracy.

● Electrostatic chuck (ESC) core components

Porous SiC is used as the electrostatic chuck substrate, which achieves vacuum adsorption through micropores, accurately fixes the wafer, and is resistant to plasma bombardment and has a long service life.

● Corrosion-resistant components

Used for the cavity lining of wet etching and cleaning equipment, it resists corrosion by strong acids (such as H₂SO₄, HNO₃) and strong alkalis (such as KOH).

● Thermal field uniformity control

In single crystal silicon growth furnaces (such as Czochralski method), as a heat shield or support, its high thermal stability is used to maintain uniform thermal fields and reduce lattice defects.

● Filtration and purification

The porous structure can intercept particulate contaminants and is used in ultra-pure gas/liquid delivery systems to ensure process cleanliness.

Advantages over traditional materials