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China GaN wafer Manufacturer, Supplier, Factory

Excellent comes 1st; service is foremost; small business is cooperation" is our organization philosophy which is regularly observed and pursued by our company for GaN wafer, GaN wafer etching process, Gallium nitride (GaN), Plasma etching (ICP/RIE) process, Etching process, We price your inquiry, For more facts, please get in touch with us, we will reply you ASAP!
GaN wafer, Based on experienced engineers, all orders for drawing-based or sample-based processing are welcomed. We have won a good reputation for outstanding customer service among our overseas customers. We will continue to try the best to offer you good quality products and the best service. We are looking forward to serving you.

Hot Products

  • Porous Tantalum Carbide (TaC) Coated Graphite Ring

    Porous Tantalum Carbide (TaC) Coated Graphite Ring

    The VETEK Porous TaC Coated Graphite Ring is a thermal field component engineered for SiC single crystal growth via the PVT (Physical Vapor Transport) process. It is produced from high-purity porous graphite and coated with tantalum carbide (TaC) using CVD technology. The design targets high-temperature stability, chemical resilience, and controlled thermal field performance. By minimizing contamination and supporting process consistency, this component contributes to reproducible SiC crystal growth outcomes.
  • 7N High-Purity CVD SiC raw material

    7N High-Purity CVD SiC raw material

    The quality of the initial source material is the primary factor limiting wafer yield in the production of SiC single crystals. VETEK's 7N High-Purity CVD SiC Bulk offers a high-density polycrystalline alternative to traditional powders, specifically engineered for Physical Vapor Transport (PVT). By utilizing a bulk CVD form, we eliminate common growth defects and significantly improve furnace throughput. Looking forward to your inquiry.
  • SiC Coated Graphite Crucible Deflector

    SiC Coated Graphite Crucible Deflector

    The SiC coated graphite crucible deflector is a key component in the single crystal furnace equipment, its task is to guide the molten material from the crucible to the crystal growth zone smoothly, and ensure the quality and shape of the single crystal growth.Vetek semiconductor can provide both graphite and SiC coating material.Welcome to contact us for more details.
  • silicon carbide ceramic coating heater

    silicon carbide ceramic coating heater

    The silicon carbide ceramic coating heater is mainly designed for the high temperature and harsh environment of semiconductor manufacturing. Its ultra-high melting point, excellent corrosion resistance and outstanding thermal conductivity determine the indispensability of this product in the semiconductor production process.
  • TaC Coating Spare Part

    TaC Coating Spare Part

    TaC Coating is currently mainly used in processes such as silicon carbide single crystal growth (PVT method), epitaxial disk (including silicon carbide epitaxy, LED epitaxy), etc. Combined with the good long-term stability of TaC Coating Plate, Veteksemicon's TaC Coating Plate has become the benchmark for TaC Coating spare parts. We look forward to you becoming our long-term partner.
  • SiC Coated Planetary Susceptor

    SiC Coated Planetary Susceptor

    Our SiC Coated Planetary Susceptor is a core component in the high temperature process of semiconductor manufacturing. Its design combines graphite substrate with silicon carbide coating to achieve comprehensive optimization of thermal management performance, chemical stability and mechanical strength.

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