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We believe that prolonged time period partnership is really a result of top of the range, benefit added provider, prosperous knowledge and personal contact for wafer boat carrier, SiC Silicon Carbide Ceramic Wafer Boat, High purity SiC wafer boat carrier, Silicon Carbide SiC Ceramic, Wafer Boat, we could solve our customer problems asap and do the profit for our customer. For those who need superior provider and excellent , pls choose us , thanks !
wafer boat carrier, we have now complete material production line, assembling line , quality control system, and the most importantly, we now have many patents technology and experienced technical&production team, expert sales service team. With all those advantages, we're about to create"the reputable international brand of nylon monofilaments", and spreading our solutions to every corner of the world. We've been keep moving and try our best to serve our customers.

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    TaC Coated Guide Ring is made of high-quality graphite and TaC coating. In the preparation of SiC crystals by PVT method, VeTek Semiconductor's TaC coated guide ring is mainly used to guide and control the airflow, optimize the single crystal growth process, and improve the single crystal yield. With excellent TaC coating technology, our products have excellent high temperature resistance, corrosion resistance and good mechanical properties.
  • Sapphire Crystal Growth rigid felt

    Sapphire Crystal Growth rigid felt

    As a large-scale factory and supplier of Sapphire Crystal Growth rigid felt products in China, VeTek Semiconductor Sapphire Crystal Growth rigid felt play an indispensable role in the operation of sapphire single crystal furnaces, spearheading critical functions throughout the entirety of the crystal growth process. By maintaining a stable furnace temperature, these components significantly reduce energy loss and enhance the quality of the growing crystals.
  • Si EPI Susceptor

    Si EPI Susceptor

    China top factory-Vetek Semiconductor combines precision machining and semiconductor SiC and TaC coating capabilities. The barrel type Si Epi Susceptor provides temperature and atmosphere control capabilities, enhancing production efficiency in semiconductor epitaxial growth processes.Looking forward to setting up cooperation relationship with you.
  • Fused Quartz Crucibles

    Fused Quartz Crucibles

    VeTek Semiconductor provides cutting-edge Fused Quartz Crucibles for semiconductor industry. These crucibles are made from high-quality semiconductor-grade quartz, offering excellent thermal resistance and chemical stability. They can withstand extreme high-temperature conditions while maintaining precision and consistency. VeTek Semiconductor is your trusted long-term partner in China for semiconductor processing.Feel free to inquire us.
  • SiC Coated Support for LPE PE2061S

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    VeTek Semiconductor is a leading manufacturer and supplier of SiC Coated graphite components in China. SiC Coated Support for LPE PE2061S is suitable for LPE silicon epitaxial reactor. As the bottom of the barrel base, SiC Coated Support for LPE PE2061S can withstand high temperatures of 1600 degrees Celsius, thereby achieving ultra-long product life and reducing customer costs. Looking forward to your inquiry and further communication.
  • LPE Halfmoon SiC EPI Reactor

    LPE Halfmoon SiC EPI Reactor

    VeTek Semiconductor is a professional LPE Halfmoon SiC EPI Reactor product manufacturer, innovator and leader in China. LPE Halfmoon SiC EPI Reactor is a device specifically designed for producing high-quality silicon carbide (SiC) epitaxial layers, mainly used in the semiconductor industry. welcome to your further inquiries.

  • What is Silicon Carbide Crystal Growth?

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  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

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    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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