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China single crystalline silicon Manufacturer, Supplier, Factory

Fast and fantastic quotations, informed advisers to help you choose the correct products that suits all your needs, a short manufacturing time, responsible good quality control and distinct companies for paying and shipping affairs for single crystalline silicon, High heat silicon, Silicon Pedestal, silicon wafer carrier, silicon boat, Currently, we're seeking ahead to even bigger cooperation with abroad customers according to mutual gains. Please experience free of charge to get in touch with us for more specifics.
single crystalline silicon, Due to our good goods and services, we've received good reputation and credibility from local and international customers. If you will need more information and are interested in any of our solutions, be sure to feel free to contact us. We look forward to becoming your supplier in the near future.

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    VeTek Semiconductor's SiC Cantilever Paddle is used in heat treatment furnaces for handling and supporting wafer boats. The high temperature stability and high thermal conductivity of SiC material ensure high efficiency and reliability in the semiconductor processing process. We are committed to providing high-quality products at competitive prices and look forward to becoming your long-term partner in China.
  • VEECO LED EPI Susceptor

    VEECO LED EPI Susceptor

    VeTek Semiconductor's VEECO LED EPI Susceptor is designed for epitaxial growth of red and yellow LEDs. Advanced materials and CVD SiC coating technology ensure the thermal stability of the Susceptor, making the temperature field uniform during growth, reducing crystal defects, and improving the quality and consistency of epitaxial wafers. It is compatible with VEECO's epitaxial growth equipment and can be seamlessly integrated into the production line. Precise design and reliable performance help improve efficiency and reduce costs. Looking forward to your inquiries.
  • Silicon-based GaN Epitaxial Susceptor

    Silicon-based GaN Epitaxial Susceptor

    The silicon-based GaN epitaxial Susceptor is the core component required for GaN epitaxial production. Veteksemicon silicon-based GaN epitaxial Susceptor is specially designed for silicon-based GaN epitaxial reactor system, with advantages such as high purity, excellent high temperature resistance and corrosion resistance. Welcome your further consultation.
  • TaC Coating Heater

    TaC Coating Heater

    VeTek Semiconductor TaC Coating Heater has an extremely high melting point (about 3880°C). The high melting point enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing customers with customized product solutions. We look forward to hearing from you.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    As a leading supplier of customized graphite crucibles in China, VeTek Semiconductor mainly provides Isostatic Graphite Crucible, SiC Coated Graphite Crucible Deflector, Glassy Carbon Coated Graphite Crucible, etc. Our graphite crucibles are made of high-purity graphite raw materials and manufactured through precision technology, with excellent high temperature resistance, corrosion resistance and thermal conductivity. Welcome to consult us.
  • Chemical Vapor Deposition Process Solid SiC Edge Ring

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    VeTek Semiconductor has always been committed to the research and development and manufacturing of advanced semiconductor materials. Today, VeTek Semiconductor has made great progress in Chemical Vapor Deposition Process Solid SiC Edge Ring products and is able to provide customers with highly customized solid SiC edge rings. Solid SiC edge rings provide better etching uniformity and precise wafer positioning when used with an electrostatic chuck, ensuring consistent and reliable etching results. Looking forward to your inquiry and becoming each other's long-term partners.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is tantalum carbide(TaC)？

    Tantalum Carbide (TaC) is a high-performance ceramic material known for its extremely high hardness, high melting point and excellent chemical stability. It is widely used in semiconductor, aerospace and other industries requiring extreme heat, wear and corrosion resistance. This article will analyze in detail the structure, physical properties, and specific uses of the finished product in semiconductor manufacturing.

  • What is the difference between CVD TaC and sintered TaC?

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  • The Problems in the Etching Process

    Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

  • ‌Optimization of Defects and Purity in SiC Crystals by TaC Coating

    The TaC coating almost completely eliminates the carbon encapsulation phenomenon by isolating the direct contact between the graphite crucible and the SiC melt, significantly reducing the defect density of microtubes

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