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This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

Semiconductor materials can be classified into three generations in chronological order. The first generation consists of common elemental materials such as germanium and silicon, which are characterized by convenient switching and are generally used in integrated circuits. The second-generation compound semiconductors such as gallium arsenide and indium phosphide are mainly used in luminescent and communication materials.

Tantalum carbide (TaC) coating can significantly extend the life of graphite parts by improving high temperature resistance, corrosion resistance, mechanical properties and thermal management capabilities. Its high purity characteristics reduce impurity contamination, improve crystal growth quality, and enhance energy efficiency. It is suitable for semiconductor manufacturing and crystal growth applications in high-temperature, highly corrosive environments.

With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).