China C/C Composite Manufacturer, Supplier, Factory

Quartz products are widely used in the semiconductor manufacturing process due to their high purity, high-temperature resistance, and strong chemical stability.

​SiC wafer carriers, as key consumables in the third-generation semiconductor industry chain, their technical characteristics directly affect the yield of epitaxial growth and device manufacturing. With the surging demand for high-voltage and high-temperature devices in industries such as 5G base stations and new energy vehicles, the research and application of SiC wafer carriers are now facing significant development opportunities.

The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

This blog discusses the specific applications of artificial intelligence in the field of CVD from two aspects: The Significance and Challenges of Chemical Vapor Deposition (CVD) Technology in Physics and CVD Technology and Machine Learning.

In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.