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China Advanced Material Manufacturer, Supplier, Factory

Our growth depends within the innovative equipment, fantastic talents and repeatedly strengthened technology forces for Advanced Material, Ultra Pure Silicon Carbide, Silicon Carbide Powder, Crystal Growth, Monocrystal Growth, Our experienced specialized workforce will probably be wholeheartedly at your provider. We sincerely welcome you to check out our web-site and organization and mail us your inquiry.
Advanced Material, Our company mission is that providing high quality and beautiful products with reasonable price and strive to gain 100% good reputation from our clients. We believe Profession achieves excellence! We welcome you to cooperate with us and grow up together.

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    Ion beam is mainly used for ion etching, ion coating and plasma injection. The role of the Ion Beam Sputter sources grid is to dissect the ions and accelerate them to the required energy. Vetek Semiconductor provides high purity graphite ion beam Ion Beam Sputter sources grid for optical lens ion beam polishing, semiconductor wafer modification, etc. Welcome to inquire about customized products.
  • LPE Halfmoon SiC EPI Reactor

    LPE Halfmoon SiC EPI Reactor

    VeTek Semiconductor is a professional LPE Halfmoon SiC EPI Reactor product manufacturer, innovator and leader in China. LPE Halfmoon SiC EPI Reactor is a device specifically designed for producing high-quality silicon carbide (SiC) epitaxial layers, mainly used in the semiconductor industry. welcome to your further inquiries.
  • Quartz Wafer Boats

    Quartz Wafer Boats

    Our Quartz Wafer Boats are high-purity wafer carrier solution tailored for semiconductor, LED, solar cell, and battery manufacturing processes. Engineered to endure high temperatures and chemically aggressive environments, this quartz boat features low thermal expansion, excellent electrical insulation, and long-term dimensional stability. Ideal for diffusion, oxidation, and LPCVD processes, it supports precise wafer alignment and is available in various sizes to meet different equipment requirements.
  • SiC Coating Cover Segments

    SiC Coating Cover Segments

    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • SiC Coating Cover Segments Inner

    SiC Coating Cover Segments Inner

    At VeTek Semiconductor, we specialize in the research, development, and industrialization of CVD SiC coating and CVD TaC coating. One exemplary product is the SiC Coating Cover Segments Inner, which undergoes extensive processing to achieve a highly precise and densely coated CVD SiC surface. This coating demonstrates exceptional resistance to high temperatures and provides robust corrosion protection. Feel free to contact us for any inquiries.
  • Porous Tantalum Carbide Coated Graphite Ring

    Porous Tantalum Carbide Coated Graphite Ring

  • Welcome customers to visit Veteksemicon's SiC Coating/ TaC Coating and Epitaxy Process Factory

    On September 5, VeTek Semiconductor's customers visited the SiC Coating and TaC Coating factories and reached further agreements on the latest Epitaxial Process solutions.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • What is the difference between CVD TaC and sintered TaC?

    This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

  • What is the epitaxial process?

    This blog takes "What is the epitaxial process?" as its theme, and provides a detailed analysis from the dimensions of Overview of Epitaxial Processes, Types of Epitaxy, Factors Influencing the Epi Process, Epitaxial Growth Techniques, EPI Growth Modes, and Epitaxy Growth’s Importance.

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    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

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    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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