Web Menu

Product Search

Language

Products

China VeTek Fine Grain High Purity Isotropic Graphite Manufacturer, Supplier, Factory

We always follow the principle "Quality Very first, Prestige Supreme". We have been fully committed to delivering our customers with competitively priced high-quality products and solutions, prompt delivery and experienced services for VeTek Fine Grain High Purity Isotropic Graphite, Special Graphite, Isotropic Graphite, High Purity Graphite, Hot field graphite parts, We guaranteed high-quality, if clients were not pleased together with the products' good quality, you can return inside of 7days with their original states.
VeTek Fine Grain High Purity Isotropic Graphite, Welcome to visit our company and factory, there are various items displayed in our showroom that will meet your expectation, meanwhile, if you are convenient to visit our website, our sales staff will try their efforts to supply you the best service

Related Products

Hot Products

  • CVD SiC coating Heating Element

    CVD SiC coating Heating Element

    CVD SiC coating Heating Element plays a core role in heating materials in PVD furnace (Evaporation Deposition). VeTek Semiconductor is a leading CVD SiC coated Heating Element manufacturer in China. We have advanced CVD coating capabilities and can provide you with customized CVD SiC coating products. VeTek Semiconductor looks forward to becoming your partner in SiC coated Heating Element.
  • Epi wafer holder

    Epi wafer holder

    VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
  • Wafer Carrier Tray

    Wafer Carrier Tray

    Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • CVD TaC Coating Crucible

    CVD TaC Coating Crucible

    VeTek Semiconductor is a professional manufacturer and leader of CVD TaC Coating Crucible products in China. CVD TaC Coating Crucible is based on tantalum carbon (TaC) coating. The tantalum carbon coating is evenly covered on the surface of the crucible through chemical vapor deposition (CVD) process to enhance its heat resistance and corrosion resistance. It is a material tool specially used in high temperature extreme environments. Welcome your further consultation.
  • SiC coated Satellite cover for MOCVD

    SiC coated Satellite cover for MOCVD

    SiC coated satellite cover for MOCVD plays an irreplaceable role in ensuring high-quality epitaxial growth on wafers due to its extremely high temperature resistance, excellent corrosion resistance and outstanding oxidation resistance.

  • Characteristics of silicon epitaxy

    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Italy's LPE's 200mm SiC epitaxial technology progress

    This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

  • What is a quartz boat?

    Quartz Boat is a key load-bearing component used in the semiconductor manufacturing process. It is mainly used for high-temperature processing of wafers, such as diffusion, oxidation and annealing. Its excellent thermal stability, low pollution characteristics and corrosion resistance make it an indispensable material in the semiconductor industry. This article will elaborate on the material, physical properties, classification, application scenarios of quartz boat and its differences from PECVD graphite boat.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • What is High-purity porous graphite?

    What is High-purity porous graphite ? - Vetek , This blog mainly introduces the specific working principle of High-purity porous graphite for SiC single crystal growth by PVT method.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept