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All we do is usually affiliated with our tenet " Buyer to start with, Belief to start with, devoting about the food packaging and environmental defense for SiC coated wafer holder, SiC coated wafer carrier, epitaxial growth furnace, wafer carrier supplier, Vetek SiC coated wafer carrier, sincerity and strength ,constantly preserve approved superior quanlity ,welcome to our factoty for pay a visit to and instruction and organization.
SiC coated wafer holder, We strive for excellence, constant improvement and innovation, is committed to make us the "customer trust" and the "first choice of engineering machinery accessories brand" suppliers. Choose us, sharing a win-win situation!

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  • SiC coated wafer carrier

    SiC coated wafer carrier

    As a leading SiC coated wafer carrier supplier and manufacturer in China, VeTek Semiconductor's SiC coated wafer carrier is made of high-quality graphite and CVD SiC coating, which has super stability and can work for a long time in most epitaxial reactors. VeTek Semiconductor has industry-leading processing capabilities and can meet customers' various customized requirements for SiC coated wafer carriers. VeTek Semiconductor looks forward to establishing a long-term cooperative relationship with you and growing together.
  • Aixtron G5 MOCVD Susceptors

    Aixtron G5 MOCVD Susceptors

    Aixtron G5 MOCVD system consists of graphite material, silicon carbide coated graphite, quartz, rigid felt material, etc. Vetek Semiconductor can customize and manufacture whole set of components for this system. We have been specialized in semiconductor graphite and quartz parts for many years.This Aixtron G5 MOCVD Susceptors kit is a versatile and efficient solution for semiconductor manufacturing with its optimal size, compatibility, and high productivity.Welcome to inquiry us.
  • Monocrystalline pulling Crucible

    Monocrystalline pulling Crucible

    Graphite crucible is an important part of Monocrystalline Pulling Crucibles in the process of achieving monocrystalline silicon ingot growth.Vetek semiconductor's crucibles are intricately engineered to meet the rigorous requirements set by the semiconductor industry.We are committed to producing and supplying crystal growth graphite crucibles that excel in performance, quality, and cost-effectiveness to meet the evolving needs of the industry.Welcome to inquiry us.
  • SiC coated deep UV LED susceptor

    SiC coated deep UV LED susceptor

    SiC coated deep UV LED susceptor is designed for MOCVD process to support efficient and stable deep UV LED epitaxial layer growth. VeTek Semiconductor is a leading manufacturer and supplier of SiC coated deep UV LED susceptor in China. We have rich experience and have established long-term cooperative relationships with many LED epitaxial manufacturers.We are the top domestic manufacturer of susceptor products for LEDs. After years of verification, our product life span is on par with that of top international manufacturers. Looking forward to your inquiry.
  • TaC Coating Rotation Susceptor

    TaC Coating Rotation Susceptor

    As a professional manufacturer, innovator and leader of TaC Coating Rotation Susceptor products in China. VeTek Semiconductor TaC Coating Rotation Susceptor is usually installed in chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) equipment to support and rotate wafers to ensure uniform material deposition and efficient reaction. It is a key component in semiconductor processing. Welcome your further consultation.
  • LPE SiC EPI Halfmoon

    LPE SiC EPI Halfmoon

    LPE SiC Epi Halfmoon is a special design for horizonational epitaxy furnace, a revolutionary product designed to elevate LPE reactor SiC epitaxy processes. This cutting-edge solution boasts several key features that ensure superior performance and efficiency throughout your manufacturing operations.Vetek Semiconductor is professional at manufacturing LPE SiC Epi halfmoon in 6 inch,8inch.Looking forward to setting up long term cooperation with you.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • What is CVD TAC Coating? - Veteksemi

    CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

  • What are the differences between MBE and MOCVD technologies?

    This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • How does SiC coating improve the oxidation resistance of carbon felt？

    The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

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