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China TaC Coated Tube Manufacturer, Supplier, Factory

Our organization sticks for the principle of "Quality will be the life of your business, and name may be the soul of it" for TaC Coated Tube, CVD TAC COATING, TAC COATING, TaC Coating, TaC Coated Susceptor, Leading the trend of this field is our persistent objective. Supplying first class solutions is our intention. To create a beautiful upcoming, we wish to cooperate with all close friends in the home and overseas. Should you have got any interest in our products and solutions, remember to never wait to call us.
TaC Coated Tube, We can meet the various needs of customers at home and abroad. We welcome new and old customers to come to consult & negotiate with us. Your satisfaction is our motivation! Let us work together to write a brilliant new chapter!

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  • Halfmoon for LPE Reaction Chamber

    Halfmoon for LPE Reaction Chamber

    The Halfmoon is a graphite component used inside LPE SiC reactors, mainly installed around the chamber hot zone. Although it does not directly contact the wafer, it still plays a role in gas flow stability and reactor operation during epitaxial growth.To handle high temperature and reactive process conditions, the component is usually protected with CVD SiC coating, while TaC coating is also available for some applications. VETEK also supplies graphite felt insulation and other coated graphite parts for SiC epitaxy systems.
  • Graphite Disc Susceptor

    Graphite Disc Susceptor

    Vetek Semiconductor provide edge-cutting Graphite Disc Susceptor. The SiC coating provides superior thermal stability, excellent chemical resistance, and enhanced process uniformity, ensuring optimal performance and reliability. Experience the next level of efficiency and precision with Vetek Semiconductor's SiC-coated Disc Susceptor.
  • SiC Crystal Growth New Technology

    SiC Crystal Growth New Technology

    Vetek Semiconductor's ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) is recommanded to be used as a source material for growing silicon carbide crystals by physical vapor transport (PVT). In SiC Crystal Growth New Technology, the source material is loaded into a crucible and sublimated onto a seed crystal. Use the high purity CVD-SiC blocks to be as a source for growing SiC crystals. Welcome to establish a partnership with us.
  • MOCVD SiC coating susceptor

    MOCVD SiC coating susceptor

    VeTek Semiconductor is a leading manufacturer and supplier of MOCVD SiC coating susceptors in China, focusing on the R&D and production of SiC coating products for many years. Our MOCVD SiC coating susceptors have excellent high temperature tolerance, good thermal conductivity, and low thermal expansion coefficient, playing a key role in supporting and heating silicon or silicon carbide (SiC) wafers and uniform gas deposition. Welcome to consult further.
  • High purity graphite powder

    High purity graphite powder

    Vetek Semiconductor offers High purity graphite powder that is a high quality product with a purity of up to 5ppm and meets the highest industry standards. Customizable particle form, mainly used for silicon carbide powder and diamond synthesis, suitable for semiconductor, electronics and high-tech industries. Welcome to inquiry us!
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • Related Blog
  • Reviews

  • The four most powerful graphite manufacturers in the world - Vetek

    The four most powerful graphite manufacturers in the world: SGL, Toyo Tanso, Tokai Carbon, Mersen and their corresponding typical graphite and application areas.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

  • ​Inside the Manufacturing of Solid CVD SiC Focus Rings: From Graphite to High-Precision Parts

    In the high-stakes world of semiconductor manufacturing, where precision and extreme environments coexist, Silicon Carbide (SiC) focus rings are indispensable. Known for their exceptional thermal resistance, chemical stability, and mechanical strength, these components are critical to advanced plasma etching processes. The secret behind their high performance lies in Solid CVD (Chemical Vapor Deposition) technology. Today, we take you behind the scenes to explore the rigorous manufacturing journey—from a raw graphite substrate to a high-precision "invisible hero" of the fab.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

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