Web Menu

Product Search

Language

Products

China SiC Paddle for Semiconductor Manufacturer, Supplier, Factory

We believe in: Innovation is our soul and spirit. Excellent is our life. Buyer want is our God for SiC Paddle for Semiconductor, SiC Cantilever Paddle, Silicon Carbide Cantilever Paddle, High Temperature SiC Paddle, SiC Cantilever Wafer Handling, High-quality is factory's everyday living , Focus on customers' demand would be the source of organization survival and advancement, We adhere to honesty and good faith doing the job attitude, seeking forward towards your coming !
SiC Paddle for Semiconductor, For many years, we have now adhered to the principle of customer oriented, quality based, excellence pursuing, mutual benefit sharing. We hope, with great sincerity and good will, to have the honor to help with your further market.

Related Products

Hot Products

  • SiC Coating Collector Top

    SiC Coating Collector Top

    Welcome to VeTek Semiconductor, your trusted manufacturer of CVD SiC coatings. We take pride in offering Aixtron SiC Coating Collector Top, which are expertly engineered using high purity graphite and feature a state-of-the-art CVD SiC coating with impurity below 5ppm. Please don't hesitate to reach out to us with any questions or inquiries
  • C/C Composite Crucible

    C/C Composite Crucible

    Designed for the harsh environment of silicon single crystal production, the C/C Composite Crucible is an indispensable component of the semiconductor silicon single crystal production process.
  • Epi wafer holder

    Epi wafer holder

    VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
  • GaN epitaxial susceptor

    GaN epitaxial susceptor

    As a leading GaN epitaxial susceptor supplier and manufacturer in China, VeTek semiconductor GaN epitaxial susceptor is a high-precision susceptor designed for GaN epitaxial growth process, used to support epitaxial equipment such as CVD and MOCVD. In the manufacturing of GaN devices (such as power electronic devices, RF devices, LEDs, etc.), GaN epitaxial susceptor carries the substrate and achieves high-quality deposition of GaN thin films under high temperature environment. Welcome your further inquiry.
  • TaC Coating Chuck

    TaC Coating Chuck

    VeTek Semiconductor's TaC Coating Chuck features a high-quality coating the surface, known for its outstanding high-temperature resistance and chemical inertness, particularly in silicon carbide (SiC) epitaxy(EPI) processes. With its exceptional features and superior performance, our TaC Coating Chuck offers several key advantages.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
  • Tantalum Carbide Coated Chuck

    Tantalum Carbide Coated Chuck

    VeTek Semiconductor is a leading Tantalum Carbide Coated Chuck manufacturer and innovator in China.We have been specialized in TaC coating for many years.Our products have a high purity and high temperature resistance up to 2000℃.We look forward to becoming your long-term partner in China.Welcome to consult at any time.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

  • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

    This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

  • Why is SiC coating a key core material for SiC epitaxial growth?

    This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

  • Characteristics of silicon epitaxy

    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

  • Can Isotropic Graphite Withstand Extreme Heat in High-Temperature Furnaces

    At VETEK, we’ve spent decades refining our isotropic graphite solutions for industries that demand reliability at soaring temperatures. Let’s dive into why this material is a top choice—and how our products outperform the competition.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept