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China graphite ring mold Manufacturer, Supplier, Factory

We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate inside our success for graphite ring mold, High-purity graphite ring, High purity graphite ring, graphite ring, Graphite seal ring, Trust us, you might discover a far better solution on car parts industry.
graphite ring mold, Now we have a excellent team supplying specialist service, prompt reply, timely delivery, excellent quality and best price to our customers. Satisfaction and good credit to every customer is our priority. We have been sincerely looking forward to cooperate with customers all over the world. We believe we can satisfy with you. We also warmly welcome customers to visit our company and purchase our solutions.

Hot Products

  • Glassy Carbon Coated Graphite Crucible

    Glassy Carbon Coated Graphite Crucible

    Customized Glassy Carbon Coated Graphite Crucible is a high-end product for E-beam Guns, silicon single crystal pulling, epitaxy.Through years of technical accumulation,Our Glassy Carbon Coated Graphite Crucible is meticulously engineered to deliver exceptional performance. It offers enhanced durability against scratching and other friction, also reduces the generation of dust. Welcome to visit our factory for more information.
  • SiC Coated Barrel Susceptor

    SiC Coated Barrel Susceptor

    Epitaxy is a technique used in semiconductor device manufacturing to grow new crystals on an existing chip to make a new semiconductor layer.VeTek Semiconductor offers a comprehensive set of component solutions for LPE silicon epitaxy reaction chambers, delivering long lifespan, stable quality, and improved epitaxial layer yield. Our product such as SiC Coated Barrel Susceptor received position feedback from customers. We also provide technical support for Si Epi, SiC Epi, MOCVD, UV-LED Epitaxy, and more. Feel free to inquire for pricing information.
  • Silicon Carbide (SiC) Cantilever Paddle

    Silicon Carbide (SiC) Cantilever Paddle

    The role of Silicon Carbide (SiC) Cantilever Paddle in the semiconductor industry is to support and transport wafers. In high-temperature processes such as diffusion and oxidation, SiC cantilever paddle can stably carry wafer boats and wafers without deformation or damage due to high temperature, ensuring the smooth progress of the process. Making diffusion, oxidation and other processes more uniform is crucial to improving the consistency and yield of wafer processing. VeTek Semiconductor uses advanced technology to build SiC cantilever paddle with high-purity silicon carbide to ensure that wafers will not be contaminated. VeTek Semiconductor looks forward to long-term cooperation with you on Silicon Carbide (SiC) Cantilever Paddle products.
  • Porous Graphite with TaC Coated

    Porous Graphite with TaC Coated

    Porous Graphite with TaC Coated is an advanced semiconductor processing material provided by VeTek Semiconductor. Porous Graphite with TaC Coated combines the advantages of porous graphite and tantalum carbide (TaC) coating, with good thermal conductivity and gas permeability. VeTek Semiconductor is committed to providing quality products at competitive prices.
  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    VeTek Semiconductor is a leading manufacturer and supplier of SiC Coated Graphite Susceptor for MOCVD in China, specializing in SiC coating applications and epitaxial semiconductor products for the semiconductor industry. Our MOCVD SiC coated graphite susceptors offer competitive quality and pricing, serving markets across Europe and America. We are committed to becoming your long-term, trusted partner in advancing semiconductor manufacturing.
  • CVD Silicon Carbide(SiC) Coated RTP Susceptor

    CVD Silicon Carbide(SiC) Coated RTP Susceptor

    The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.

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