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"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Aixtron Epitaxy, Aixtron G5 MOCVD Susceptors, Aixtron G5, Aixtron G5 MOCVD Susceptor, MOCVD Susceptor, In case you are intrigued in any of our products or want to focus on a personalized get, please sense totally free to contact us. We're wanting ahead to forming successful enterprise relationships with new shoppers across the world during the in close proximity to long term.
Aixtron Epitaxy, Our company will continue to serve customers with best quality, competitive price and timely delivery & the best payment term! We sincerely welcome friends from all over the world to visit& cooperate with us and enlarge our business. If you are interested in our items, make sure you do not hesitate to contact us, we'll be happy to provide you with further information!

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    As one of the leading wafer susceptor manufacturing plants in China, VeTek Semiconductor has made continuous progress in wafer susceptor products and has become the first choice for many epitaxial wafer manufacturers. The SiC Coated Barrel Susceptor for LPE PE2061S provided by VeTek Semiconductor is designed for LPE PE2061S 4'' wafers. The susceptor has a durable silicon carbide coating that improves performance and durability during the LPE (liquid phase epitaxy) process. Welcome your inquiry, we look forward to becoming your long-term partner.
  • SiC Coating Susceptor

    SiC Coating Susceptor

    Vetek Semiconductor focuses on the research and development and industrialization of CVD SiC coating and CVD TaC coating. Taking SiC coating susceptor as an example, the product is highly processed with high precision, dense CVD SIC coating, high temperature resistance and strong corrosion resistance. Your inquiry into us is welcome.
  • Silicon Carbide Cantilever Paddle

    Silicon Carbide Cantilever Paddle

    VeTek Semiconductor's Silicon Carbide Cantilever Paddle is an important component in the semiconductor manufacturing process, especially suitable for diffusion furnaces or LPCVD furnaces in high-temperature processes such as diffusion and RTP. Our Silicon Carbide Cantilever Paddle is carefully designed and manufactured with excellent high-temperature resistance and mechanical strength, and can safely and reliably transport wafers to the process tube under harsh process conditions for various high-temperature processes such as diffusion and RTP. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • EDM graphite electrode

    EDM graphite electrode

    EDM graphite electrode has the characteristics of moderate density, smooth surface and low cost, and is suitable for chemical industry, metal smelting, etc. VeTek Semiconductor has strong production capacity and rich export experience in EDM graphite electrode products. You are welcome to inquire at any time.
  • SiC Wafer Boat

    SiC Wafer Boat

    The SiC wafer boat is used to carry the wafer,mainly for the oxidation and diffusion process, to ensure that the temperature can be evenly distributed on the wafer surface. The high temperature stability and high thermal conductivity of SiC materials ensure efficient and reliable semiconductor processing. Vetek semiconductor is committed to providing quality products at competitive prices.
  • Silicon Carbide Coated Epi Susceptor

    Silicon Carbide Coated Epi Susceptor

    VeTek Semiconductor is a leading manufacturer and supplier of SiC coating products in China. VeTek Semiconductor's silicon carbide coated Epi susceptor has the industry's top quality level, is suitable for multiple styles of epitaxial growth furnaces, and provides highly customized product services. VeTek Semiconductor looks forward to becoming your long-term partner in China.

  • How Do Tantalum Carbide Coatings Stabilize the PVT Thermal Field?

    ​In the silicon carbide (SiC) PVT crystal growth process, the stability and uniformity of the thermal field directly determine the crystal growth rate, defect density, and material uniformity. As the system boundary, thermal-field components exhibit surface thermophysical properties whose slight fluctuations are dramatically amplified under high-temperature conditions, ultimately leading to instability at the growth interface.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

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  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

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