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This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

This blog takes "How Porous Graphite Enhances Silicon Carbide Crystal Growth?" as its theme, and discusses in detail Porous Graphite Key Takeaways, The Role of Silicon Carbide in Semiconductor Technology, Unique Properties of Porous Graphite, How Porous Graphite Optimizes the PVT Process, Innovations in Porous Graphite Materials and other angles.

​Silicon carbide (SiC) PVT growth involves severe thermal cycling (room temperature above 2200 ℃). The enormous thermal stress generated between the coating and the graphite substrate due to the mismatch in coefficients of thermal expansion (CTE) is the core challenge determining coating lifetime and application reliability.

With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

The TaC coating almost completely eliminates the carbon encapsulation phenomenon by isolating the direct contact between the graphite crucible and the SiC melt, significantly reducing the defect density of microtubes

With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.