SiC Single Crystal Growth Process Spare Parts

VeTekSemicon's product, the tantalum carbide (TaC) coating products for SiC Single Crystal Growth Process, addresses the challenges associated with the growth interface of silicon carbide (SiC) crystals, particularly the comprehensive defects that occur at the crystal's edge. By applying TaC coating, we aim to improve crystal growth quality and increase the effective area of the crystal's center, which is crucial for achieving fast and thick growth.

TaC coating is a core technological solution for growing high-quality SiC single crystal growth process. We have successfully developed a TaC coating technology using chemical vapor deposition (CVD), which has reached an internationally advanced level. TaC has exceptional properties, including a high melting point of up to 3880°C, excellent mechanical strength, hardness, and thermal shock resistance. It also exhibits good chemical inertness and thermal stability when exposed to high temperatures and substances such as ammonia, hydrogen, and silicon-containing steam.

Veteksemicon's tantalum carbide (TaC) coating offers a solution to address the edge-related issues in SiC Single Crystal Growth Process, improving the quality and efficiency of the growth process. With our advanced TaC coating technology, we aim to support the development of the third-generation semiconductor industry and reduce dependence on imported key materials.

PVT method SiC Single crystal growth process spare parts:

TaC Coated Crucible, Seed Holder with TaC Coating, TaC coating Guide Ring are important parts in SiC and AIN single crystal furnace by PVT method.

●  High temperature resistance

●  High purity, will not pollute SiC raw materials and SiC single crystals.

●  Resistant to Al steam and N₂corrosion

●  High eutectic temperature (with AlN) to shorten the crystal preparation cycle.

●  Recyclable (up to 200h), it improves the sustainability and efficiency of the preparation of such single crystals.