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The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.

This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

8-inch SiC epitaxial furnace and homoepitaxial process research

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN