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China PECVD process Manufacturer, Supplier, Factory

We always get the job done being a tangible workforce making sure that we can easily give you the very best quality as well as finest selling price for PECVD process, Quartz Shower Head, Quartz Gas Distribution Plate, Semiconductor CVD, High Purity Quartz, We are wanting forward to even larger cooperation with abroad customers dependant on mutual rewards. Make sure you sense free to make contact with us for more depth!
PECVD process, We are going to supply much better items with diversified designs and professional services. We sincerely welcome friends from over the world to visit our company and cooperate with us on the basis of long-term and mutual benefits.

Hot Products

  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • GaN epitaxial susceptor

    GaN epitaxial susceptor

    As a leading GaN epitaxial susceptor supplier and manufacturer in China, VeTek semiconductor GaN epitaxial susceptor is a high-precision susceptor designed for GaN epitaxial growth process, used to support epitaxial equipment such as CVD and MOCVD. In the manufacturing of GaN devices (such as power electronic devices, RF devices, LEDs, etc.), GaN epitaxial susceptor carries the substrate and achieves high-quality deposition of GaN thin films under high temperature environment. Welcome your further inquiry.
  • CVD SiC Coated Skirt

    CVD SiC Coated Skirt

    VeTek Semiconductor is a leading manufacturer and leader of CVD SiC Coated Skirt in China. Our main CVD SiC coating products include CVD SiC coated Skirt, CVD SiC Coating Ring. Looking forward to your contact.
  • High purity graphite soft felt

    High purity graphite soft felt

    VeTek Semiconductor is a leading manufacturer and supplier of high purity graphite soft felt from China. The high purity graphite soft felt is widely used in semiconductor, photovoltaic and other fields. Whether vacuum high pressure gas quenching furnace, vacuum sintering furnace, single crystal silicon furnace, silicon carbide growth furnace and other furnace types, can provide excellent thermal insulation performance. According to user requirements, we can process various shapes of high purity graphite soft felt, the surface of the product can also be coating treatment. Looking forward to your inquiry.
  • TaC Coating Rotation Susceptor

    TaC Coating Rotation Susceptor

    As a professional manufacturer, innovator and leader of TaC Coating Rotation Susceptor products in China. VeTek Semiconductor TaC Coating Rotation Susceptor is usually installed in chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) equipment to support and rotate wafers to ensure uniform material deposition and efficient reaction. It is a key component in semiconductor processing. Welcome your further consultation.
  • Large sized resistance heating SiC crystal growth furnace

    Large sized resistance heating SiC crystal growth furnace

    Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.

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