MOCVD Technology

Veteksemicon's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.Welcome to consult at any time.

The silicon-based GaN epitaxial Susceptor is the core component required for GaN epitaxial production. Veteksemicon silicon-based GaN epitaxial Susceptor is specially designed for silicon-based GaN epitaxial reactor system, with advantages such as high purity, excellent high temperature resistance and corrosion resistance. Welcome your further consultation.