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China Epitaxy systems Manufacturer, Supplier, Factory

We believe in: Innovation is our soul and spirit. Quality is our life. Shopper need is our God for Epitaxy systems, TSl systems, SiC Epitaxy, CVD SiC coated Halfmoon, SiC Epitaxial Layers, To acquire a consistent, profitable, and constant development by getting a aggressive advantage, and by continuously increasing the value added to our shareholders and our employee.
Epitaxy systems, Customer satisfaction is our goal. We're looking forward to cooperating with you and providing our best services in your case. We warmly welcome you to contact us and remember to feel free to contact us. Browse our online showroom to see what we can do for yourself. And then E-mail us your specifications or inquiries today.

Hot Products

  • LPE SI EPI Susceptor Set

    LPE SI EPI Susceptor Set

    Flat susceptor and barrel susceptor are the main shape of epi susceptors.VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4" wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
  • SiC Coating Wafer Carrier

    SiC Coating Wafer Carrier

    As a professional SiC coating wafer carrier manufacturer and supplier, Vetek Semiconductor's SiC coating wafer carriers are mainly used to improve the growth uniformity of epitaxial layer, ensuring their stability and integrity in high temperature and corrosive environments.
  • SiC coated epitaxial reactor chamber

    SiC coated epitaxial reactor chamber

    Veteksemicon SiC Coated Epitaxial Reactor chamber is a core component designed for demanding semiconductor epitaxial growth processes. Utilizing advanced chemical vapor deposition (CVD), this product forms a dense, high-purity SiC coating on a high-strength graphite substrate, resulting in superior high-temperature stability and corrosion resistance. It effectively resists the corrosive effects of reactant gases in high-temperature process environments, significantly suppresses particulate contamination, ensures consistent epitaxial material quality and high yield, and substantially extends the maintenance cycle and lifespan of the reaction chamber. It is a key choice for improving the manufacturing efficiency and reliability of wide-bandgap semiconductors such as SiC and GaN.
  • SiC coating Monocrystalline silicon epitaxial tray

    SiC coating Monocrystalline silicon epitaxial tray

    SiC coating Monocrystalline silicon epitaxial tray is an important accessory for monocrystalline silicon epitaxial growth furnace, ensuring minimal pollution and stable epitaxial growth environment. VeTek Semiconductor's SiC coating Monocrystalline silicon epitaxial tray has an ultra-long service life and provides a variety of customization options. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Veteksemicon SiC Cantilever Paddles are high-purity silicon carbide support arms designed for wafer handling in horizontal diffusion furnaces and epitaxial reactors. With exceptional thermal conductivity, corrosion resistance, and mechanical strength, these paddles ensure stability and cleanliness in demanding semiconductor environments. Available in custom sizes and optimized for long service life.
  • Silicon Carbide Seed Crystal Bonding Vacuum Hot-Press Furnace

    Silicon Carbide Seed Crystal Bonding Vacuum Hot-Press Furnace

    The SiC seed bonding technology is one of the key processes that affect crystal growth.VETEK has developed a specialized vacuum hot-press furnace for seed bonding based on the characteristics of this process. The furnace can effectively reduce various defects generated during the seed bonding process, thereby improving the yield and the final quality of the crystal ingot.

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