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This blog takes "What is Silicon Carbide Crystal Growth?" as its theme and provides a detailed analysis from four dimensions: The Principle of Silicon Carbide Crystal Growth, The Crystal Structure of SiC, Physical Vapor Transport Method (PVT) and the Step Flow Growth to Grow Single Crystal.

This blog takes "What is the epitaxial process?" as its theme, and provides a detailed analysis from the dimensions of Overview of Epitaxial Processes, Types of Epitaxy, Factors Influencing the Epi Process, Epitaxial Growth Techniques, EPI Growth Modes, and Epitaxy Growth’s Importance.

With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

The four most powerful graphite manufacturers in the world: SGL, Toyo Tanso, Tokai Carbon, Mersen and their corresponding typical graphite and application areas.

The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).