In the world of wide-bandgap (WBG) semiconductors, if the advanced manufacturing process is the "soul," the graphite susceptor is the "backbone," and its surface coating is the critical "skin."
In the high-stakes world of power electronics, Silicon Carbide (SiC) and Gallium Nitride (GaN) are spearheading a revolution—from Electric Vehicles (EVs) to renewable energy infrastructure. However, the legendary hardness and chemical inertness of these materials present a formidable manufacturing bottleneck.
In semiconductor manufacturing, the Chemical Mechanical Planarization (CMP) process is the core stage for achieving wafer surface planarization, directly determining the success or failure of subsequent lithography steps. As the critical consumable in CMP, the performance of the Polishing Slurry is the ultimate factor in controlling Removal Rate (RR), minimizing defects, and enhancing overall yield.
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