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Silicon Epitaxy

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SiC Coated Support for LPE PE2061S

SiC Coated Support for LPE PE2061S

VeTek Semiconductor is a leading manufacturer and supplier of SiC Coated graphite components in China. SiC Coated Support for LPE PE2061S is suitable for LPE silicon epitaxial reactor. As the bottom of the barrel base, SiC Coated Support for LPE PE2061S can withstand high temperatures of 1600 degrees Celsius, thereby achieving ultra-long product life and reducing customer costs. Looking forward to your inquiry and further communication.
SiC Coated Top Plate for LPE PE2061S

SiC Coated Top Plate for LPE PE2061S

VeTek Semiconductor has been deeply engaged in SiC coating products for many years and has become a leading manufacturer and supplier of SiC Coated Top Plate for LPE PE2061S in China. The SiC Coated Top Plate for LPE PE2061S we provide is designed for LPE silicon epitaxial reactors and is located on the top together with the barrel base. This SiC Coated Top Plate for LPE PE2061S has excellent characteristics such as high purity, excellent thermal stability and uniformity, which helps to grow high-quality epitaxial layers. No matter what product you need, we look forward to your inquiry.
SiC Coated Barrel Susceptor for LPE PE2061S

SiC Coated Barrel Susceptor for LPE PE2061S

As one of the leading wafer susceptor manufacturing plants in China, VeTek Semiconductor has made continuous progress in wafer susceptor products and has become the first choice for many epitaxial wafer manufacturers. The SiC Coated Barrel Susceptor for LPE PE2061S provided by VeTek Semiconductor is designed for LPE PE2061S 4'' wafers. The susceptor has a durable silicon carbide coating that improves performance and durability during the LPE (liquid phase epitaxy) process. Welcome your inquiry, we look forward to becoming your long-term partner.

Veteksemicon silicon epitaxy solutions are your strategic procurement choice for advanced semiconductor wafer processing, particularly in CMOS, power devices, and MEMS applications. As a key process in wafer engineering, silicon epitaxy (Si Epi) involves the precise deposition of a crystalline silicon layer on top of a polished silicon wafer, offering superior control of doping profiles, defect density, and layer thickness.


Veteksemicon provides epitaxy-ready susceptor parts and reactor components used in Epi CVD systems, supporting both atmospheric and reduced pressure processes. Our product lineup includes silicon epitaxy susceptors, carrier rings, and coated wafer holders, optimized for compatibility with tools from Applied Materials, ASM, and Tokyo Electron (TEL).


Silicon epitaxy plays a critical role in producing ultra-thin junctions, strained silicon layers, and high-voltage isolation structures. Our materials and parts are engineered for high-purity, uniform thermal distribution, and anti-contamination performance during n-type and p-type epitaxial growth.


Closely associated terms include epitaxial wafer, in-situ doping, epitaxy-ready SiC coatings, and epi reactor parts, which support the entire upstream and downstream process of silicon-based IC fabrication.


Discover more about Veteksemicon’s silicon epitaxy support solutions by visiting our product detail page or contacting us for technical consultation and part customization.


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