Silicon Epitaxy

Silicon Epitaxy, EPI,Epitaxy,Epitaxial refers to the growth of a layer of crystal with the same crystal direction and different crystal thickness on a single crystalline silicon substrate. Epitaxial growth technology is required for the manufacturing of semiconductor discrete components and integrated circuits, because the impurities contained in semiconductors include N-type and P-type. Through a combination of different types, semiconductor devices exhibit a variety of functions.

Silicon epitaxy growth method can be divided into gas phase epitaxy, liquid phase epitaxy(LPE), solid phase epitaxy, chemical vapor deposition growth method is widely used in the world to meet the lattice integrity.

Typical silicon epitaxial equipment is represented by the Italian company LPE, which has pancake epitaxial hy pnotic tor,barrel type hy pnotic tor,semiconductor hy pnotic,wafer carrier and so on. The schematic diagram of barrel-shaped epitaxial hy pelector reaction chamber is as follows. VeTek Semiconductor can provide barrel-shaped wafer epitaxial hy pelector. The quality of SiC coated HY pelector is very mature. Quality equivalent to SGL; At the same time, VeTek Semiconductor can also provide silicon epitaxial reaction cavity quartz nozzle, quartz Baffle,bell jar and other complete products.

Vertial Epitaxial Susceptor for Silicon Epitaxy:

VeTek Semiconductor's main vertical epitaxial susceptor products

SiC Coated Graphite Barrel Susceptor for EPI SiC Coated Barrel Susceptor CVD SiC Coated Barrel Susceptor LPE SI EPI Susceptor Set

Horizonal Epitaxial Susceptor for Silicon Epitaxy:

Vetek Semiconductor's main horizontal epitaxial susceptor products

SiC coating Monocrystalline silicon epitaxial tray SiC Coated Support for LPE PE2061S Graphite Rotating Susceptor