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We've one of the most advanced generation tools, experienced and qualified engineers and workers, recognized good quality manage systems and a friendly skilled product sales workforce pre/after-sales support for CVD SiC coated Heating Element, CVD SiC coating Heating Element, CVD SiC coating, SiC coated Heater, SiC coating Heating Element, We warmly welcome clients from all around the world for almost any sort of cooperation with us to build a mutual advantage potential. We've been devoting ourselves wholeheartedly to supply consumers the very best company.
CVD SiC coated Heating Element, The credibility is the priority, and the service is the vitality. We promise we now have the ability to supply excellent quality and reasonable price products and solutions for customers. With us, your safety is guaranteed.

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  • SiC coated sealing ring for Epitaxy

    SiC coated sealing ring for Epitaxy

    Our SiC coated sealing ring for Epitaxy is a high-performance sealing component based on graphite or carbon-carbon composites coated with high-purity silicon carbide (SiC) by chemical vapor deposition (CVD), which combines the thermal stability of graphite with the extreme environmental resistance of SiC, and is designed for semiconductor epitaxial equipment (e.g., MOCVD, MBE).
  • Aixtron Satellite wafer carrier

    Aixtron Satellite wafer carrier

    VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
  • Silicon Carbide Wafer Boat

    Silicon Carbide Wafer Boat

    VeTek Semiconductor's high-purity Silicon Carbide Wafer Boat is made of extremely pure silicon carbide material with excellent thermal stability, mechanical strength and chemical resistance. High-purity Silicon Carbide Wafer Boat is used in hot zone applications in semiconductor manufacturing, especially in high-temperature environments, and plays an important role in protecting wafers, transporting materials and maintaining stable processes. VeTek Semiconductor will continue to work hard to innovate and improve the performance of high-purity Silicon Carbide Wafer Boat to meet the evolving needs of semiconductor manufacturing. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • Semiconductor Quartz Bell Jar

    Semiconductor Quartz Bell Jar

    As a China professional Semiconductor Quartz Bell Jar supplier and manufacturer. Vetek Semiconductor's Quartz Bell Jar is usually used in key components of semiconductor manufacturing equipment, especially in CVD process, diffusion, oxidation and PVD process. Welcome your further inquiries.
  • SiC Crystal Growth New Technology

    SiC Crystal Growth New Technology

    Vetek Semiconductor's ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) is recommanded to be used as a source material for growing silicon carbide crystals by physical vapor transport (PVT). In SiC Crystal Growth New Technology, the source material is loaded into a crucible and sublimated onto a seed crystal. Use the high purity CVD-SiC blocks to be as a source for growing SiC crystals. Welcome to establish a partnership with us.
  • Hot Zone graphite heater

    Hot Zone graphite heater

    Veteksemicon Hot Zone graphite heater is designed to handle the extreme conditions in high temperature furnaces and maintain excellent performance and stability in complex processes such as chemical vapor deposition (CVD), epitaxial growth and high temperature annealing. Veteksemicon always focuses on producing and providing high-quality Hot Zone graphite heaters. We sincerely invite you to contact us.

  • 8-inch SiC epitaxial furnace and homoepitaxial process research

    8-inch SiC epitaxial furnace and homoepitaxial process research

  • Chip Manufacturing: Atomic Layer Deposition (ALD)

    In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

  • What is Wafer CMP Polishing Slurry?

    Wafer CMP polishing slurry is a specially formulated liquid material used in the CMP process of semiconductor manufacturing. It consists of water, chemical etchants, abrasives, and surfactants, enabling both chemical etching and mechanical polishing.

  • What measurement equipment are there in the Fab factory? - VeTek semiconductor

    There are many types of measurement equipment in the Fab factory. Common equipment includes lithography process measurement equipment, etching process measurement equipment, thin film deposition process measurement equipment, doping process measurement equipment, CMP process measurement equipment, wafer particle detection equipment and other measurement equipment.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

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