Products
MOCVD LED Epi Susceptor
  • MOCVD LED Epi SusceptorMOCVD LED Epi Susceptor

MOCVD LED Epi Susceptor

VeTek Semiconductor is a professional manufacturer of MOCVD LED Epi Susceptor in China. our MOCVD LED Epi Susceptor is designed for demanding epitaxial equipment applications. Its high thermal conductivity, chemical stability and durability are key factors to ensure a stable epitaxial growth process and semiconductor film production.

VeTekSemicon’s MOCVD LED Epi Susceptor is a core component. In the preparation process of semiconductor devices, MOCVD LED Epi Susceptor is not only a simple heating platform, but also a precision process tool, which has a profound impact on the quality, growth rate, uniformity and other aspects of thin film materials.


The specific uses of MOCVD LED Epi Susceptor in semiconductor processing are as follows:


●  Substrate heating and uniformity control:

MOCVD Epitaxy Susceptor is used to provide uniform heating to ensure stable temperature of substrate during epitaxial growth. This is essential for obtaining high-quality semiconductor films and ensuring consistency in thickness and crystal quality of epitaxial layers across the substrate.


●  Support for Chemical Vapor Deposition (CVD) Reactor Chambers:

As an important component in the CVD reactor, Susceptor supports the deposition of metal organic compounds on substrates. It helps to accurately convert these compounds into solid films to form the desired semiconductor materials.


●  Promote gas distribution:

The design of Susceptor can optimize the flow distribution of gases in the reaction chamber, ensuring that the reaction gas contacts the substrate evenly, thereby improving the uniformity and quality of epitaxial films.


You can rest assured to buy customized MOCVD LED Epi Susceptor from us, we look forward to cooperating with you. If you want to know more information, you can consult us immediately and we will reply you in time!


Basic physical properties of CVD SiC coating:


Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) oriented
Density
3.21 g/cm³
Hardness
2500 Vickers hardness(500g load)
Grain Size
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus
430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1




Production shops:


VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry chain


Overview of the semiconductor chip epitaxy industry chain

Hot Tags: MOCVD LED Epi Susceptor
Send Inquiry
Contact Info
For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept