Silicon Carbide Epitaxy

The preparation of high-quality silicon carbide epitaxy depends on advanced technology and equipment and equipment accessories. At present, the most widely used silicon carbide epitaxy growth method is Chemical vapor deposition (CVD). It has the advantages of precise control of epitaxial film thickness and doping concentration, fewer defects, moderate growth rate, automatic process control, etc., and is a reliable technology that has been successfully applied commercially.

Silicon carbide CVD epitaxy generally adopts hot wall or warm wall CVD equipment, which ensures the continuation of epitaxy layer 4H crystalline SiC under high growth temperature conditions (1500 ~ 1700℃), hot wall or warm wall CVD after years of development, according to the relationship between the inlet air flow direction and the substrate surface, Reaction chamber can be divided into horizontal structure reactor and vertical structure reactor.

There are three main indicators for the quality of SIC epitaxial furnace, the first is epitaxial growth performance, including thickness uniformity, doping uniformity, defect rate and growth rate; The second is the temperature performance of the equipment itself, including heating/cooling rate, maximum temperature, temperature uniformity; Finally, the cost performance of the equipment itself, including the price and capacity of a single unit.

Three kinds of silicon carbide epitaxial growth furnace and core accessories differences

Hot wall horizontal CVD (typical model PE1O6 of LPE company), warm wall planetary CVD (typical model Aixtron G5WWC/G10) and quasi-hot wall CVD (represented by EPIREVOS6 of Nuflare company) are the mainstream epitaxial equipment technical solutions that have been realized in commercial applications at this stage. The three technical devices also have their own characteristics and can be selected according to demand. Their structure is shown as follows:

The corresponding core components are as follows:

(a) Hot wall horizontal type core part- Halfmoon Parts consists of

Downstream insulation

Main insulation upper

Upper halfmoon

Upstream insulation

Transition piece 2

Transition piece 1

External air nozzle

Tapered snorkel

Outer argon gas nozzle

Argon gas nozzle

Wafer support plate

Centering pin

Central guard

Downstream left protection cover

Downstream right protection cover

Upstream left protection cover

Upstream right protection cover

Side wall

Graphite ring

Protective felt

Supporting felt

Contact block

Gas outlet cylinder

(b)Warm wall planetary type

SiC coating Planetary Disk &TaC coated Planetary Disk

(c)Quasi-thermal wall standing type

Nuflare (Japan): This company offers dual-chamber vertical furnaces that contribute to increased production yield. The equipment features high-speed rotation of up to 1000 revolutions per minute, which is highly beneficial for epitaxial uniformity. Additionally, its airflow direction differs from other equipment, being vertically downward, thus minimizing the generation of particles and reducing the probability of particle droplets falling onto the wafers. We provide core SiC coated graphite components for this equipment.

As a supplier of SiC epitaxial equipment components, VeTek Semiconductor is committed to providing customers with high-quality coating components to support the successful implementation of SiC epitaxy.