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Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

Over the past few years, the center stage of packaging technology has gradually been ceded to a seemingly "old technology" - CMP (Chemical Mechanical Polishing). When Hybrid Bonding becomes the leading role of the new generation of advanced packaging, CMP is gradually moving from behind the scenes to the spotlight.

In the ever-evolving world of home and kitchen appliances, one product has recently gained significant attention for its innovation and practical application—the Quartz Thermos Bucket

Quartz products are widely used in the semiconductor manufacturing process due to their high purity, high-temperature resistance, and strong chemical stability.

Silicon carbide (SiC) crystal growth furnaces play a vital role in producing high-performance Sic wafers for next-generation semiconductor devices. However, the process of growing high-quality SiC crystals presents significant challenges. From managing extreme thermal gradients to reducing crystal defects, ensuring uniform growth, and controlling production costs, each step requires advanced engineering solutions. This article will analyze the technical challenges of SIC crystal growth furnaces from multiple perspectives.

Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.