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The electrostatic chuck(ESC), also known as the electrostatic chuck (ESC, e-chuck), is a fixture that uses the principle of electrostatic adsorption to hold and fix the adsorbed material. It is suitable for vacuum and plasma environments.

​SiC wafer carriers, as key consumables in the third-generation semiconductor industry chain, their technical characteristics directly affect the yield of epitaxial growth and device manufacturing. With the surging demand for high-voltage and high-temperature devices in industries such as 5G base stations and new energy vehicles, the research and application of SiC wafer carriers are now facing significant development opportunities.

Alumina ceramics are the "workhorse" for manufacturing ceramic components. They exhibit excellent mechanical properties, ultra-high melting points and hardness, corrosion resistance, strong chemical stability, high resistivity, and superior electrical insulation. They are commonly used to fabricate polishing plates, vacuum chucks, ceramic arms, and similar parts.

Semiconductor materials can be classified into three generations in chronological order. The first generation consists of common elemental materials such as germanium and silicon, which are characterized by convenient switching and are generally used in integrated circuits. The second-generation compound semiconductors such as gallium arsenide and indium phosphide are mainly used in luminescent and communication materials.

Quartz devices play a critical role in solar cell manufacturing, offering exceptional thermal resistance, chemical purity, and structural stability required in high-temperature processes. From quartz diffusion tubes and crucibles to quartz boats and furnace components, these high-purity materials are essential for achieving optimal efficiency in diffusion, CVD, and wet etching steps.

The TaC coating almost completely eliminates the carbon encapsulation phenomenon by isolating the direct contact between the graphite crucible and the SiC melt, significantly reducing the defect density of microtubes