Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.
In the preparation of high-quality and high-yield silicon carbide substrates, the core requires precise control of production temperature by good thermal field materials. Currently, the thermal field crucible kits mainly used are high-purity graphite structural components, whose functions are to heat molten carbon powder and silicon powder as well as to maintain heat.
When you see the third-generation semiconductors, you will surely wonder what the first and second generations were. The "generation" here is classified based on the materials used in semiconductor manufacturing.
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