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The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

8-inch SiC epitaxial furnace and homoepitaxial process research

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.