Industry News

This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

This article mainly introduces the product types, product characteristics and main functions of TaC Coating in semiconductor processing, and makes a comprehensive analysis and interpretation of TaC Coating products as a whole.

This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.

In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.