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China Thermal spraying Manufacturer, Supplier, Factory

We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate in our success for Thermal spraying, Thermal spraying technology, MLCC capacitor, Monocrystalline pulling Crucible, Three-petal Graphite Crucible, Our aim is "blazing new ground, Passing Value", in the future, we sincerely invite you to grow up with us and make a bright future together!
Thermal spraying, Being guided by customer demands, aiming at improving the efficiency and quality of customer service, we constantly improve products and provide more comprehensive services. We sincerely welcome friends to negotiate business and start cooperation with us. We hope to join hands with friends in different industries to create a brilliant future.

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    VeTek Semiconductor is a professional LPE Halfmoon SiC EPI Reactor product manufacturer, innovator and leader in China. LPE Halfmoon SiC EPI Reactor is a device specifically designed for producing high-quality silicon carbide (SiC) epitaxial layers, mainly used in the semiconductor industry. welcome to your further inquiries.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    As an advanced manufacturer and producer of Tantalum Carbide Ring products in China, VeTek Semiconductor Tantalum Carbide Ring has extremely high hardness, wear resistance, high temperature resistance and chemical stability, and is widely used in the semiconductor manufacturing field. Especially in CVD, PVD, ion implantation process, etching process, and wafer processing and transportation, it is an indispensable product for semiconductor processing and manufacturing. Looking forward to your further consultation.
  • SiC Coated Wafer Carrier for Etching

    SiC Coated Wafer Carrier for Etching

    As a leading Chinese manufacturer and supplier of Silicon Carbide Coating products, Veteksemicon's SiC Coated Wafer Carrier for Etching plays an irreplaceable core role in the etching process with its excellent high temperature stability, outstanding corrosion resistance and high thermal conductivity.
  • CVD SiC Coating Nozzle

    CVD SiC Coating Nozzle

    CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications. Welcome your further inquiry.
  • Vertical furnace SiC coated ring

    Vertical furnace SiC coated ring

    Vertical furnace SiC coated ring is a component specially designed for Vertical furnace. VeTek Semiconductor can do the best for you in terms of both materials and manufacturing processes. As a leading manufacturer and supplier of Vertical furnace SiC coated ring in China, VeTek Semiconductor is confident that we can provide you with the best products and services.
  • SiC coated sealing ring for Epitaxy

    SiC coated sealing ring for Epitaxy

    Our SiC coated sealing ring for Epitaxy is a high-performance sealing component based on graphite or carbon-carbon composites coated with high-purity silicon carbide (SiC) by chemical vapor deposition (CVD), which combines the thermal stability of graphite with the extreme environmental resistance of SiC, and is designed for semiconductor epitaxial equipment (e.g., MOCVD, MBE).
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  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is CVD TAC Coating? - Veteksemi

    CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • What is the Core Material for SiC Growth ?

    In the preparation of high-quality and high-yield silicon carbide substrates, the core requires precise control of production temperature by good thermal field materials. Currently, the thermal field crucible kits mainly used are high-purity graphite structural components, whose functions are to heat molten carbon powder and silicon powder as well as to maintain heat.

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    ​Silicon carbide (SiC) PVT growth involves severe thermal cycling (room temperature above 2200 ℃). The enormous thermal stress generated between the coating and the graphite substrate due to the mismatch in coefficients of thermal expansion (CTE) is the core challenge determining coating lifetime and application reliability.

  • Intelligent Cutting Technology for Cubic Silicon Carbide Wafers

    Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.

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