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High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

Solid silicon carbide (SiC) has become one of the key materials in semiconductor manufacturing due to its unique physical properties. The following is an analysis of its advantages and practical value based on its physical properties and its specific applications in semiconductor equipment (such as wafer carriers, shower heads, etching focus rings, etc.).