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What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? -  VeTek Semiconductor10 2024-10

What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.
Principles and Technology of Physical Vapor Deposition (PVD) Coating (2/2) - VeTek Semiconductor24 2024-09

Principles and Technology of Physical Vapor Deposition (PVD) Coating (2/2) - VeTek Semiconductor

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.
Principles and Technology of Physical Vapor Deposition Coating (1/2)  - VeTek Semiconductor24 2024-09

Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.
What is Porous Graphite? - VeTek Semiconductor23 2024-09

What is Porous Graphite? - VeTek Semiconductor

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.
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