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The Solution to the Carbon Encapsulation Defect in Silicon Carbide Substrates12 2026-01

The Solution to the Carbon Encapsulation Defect in Silicon Carbide Substrates

With the global energy transition, the AI revolution, and the wave of new-generation information technologies, silicon carbide (SiC) has rapidly advanced from being a "potential material" to a "strategic foundational material" due to its exceptional physical properties.
What is Silicon Carbide(SiC)Ceramic Wafer Boat?08 2026-01

What is Silicon Carbide(SiC)Ceramic Wafer Boat?

In semiconductor high-temperature processes, the handling, supporting, and thermal treatment of wafers rely on a special supporting component—the wafer boat. As process temperatures rise and cleanliness and particle control requirements increase, traditional quartz wafer boats gradually reveal issues such as short service life, high deformation rates, and poor corrosion resistance.
Why is SiC PVT Crystal Growth Stable in Mass Production?29 2025-12

Why is SiC PVT Crystal Growth Stable in Mass Production?

For industrial-scale production of silicon carbide substrates, the success of a single growth run is not the end goal. The real challenge lies in ensuring that crystals grown across different batches, tools, and time periods maintain a high level of consistency and repeatability in quality. In this context, the role of tantalum carbide (TaC) coating goes beyond basic protection—it becomes a key factor in stabilizing the process window and safeguarding product yield.
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