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Application of carbon-based thermal field materials in silicon carbide crystal growth21 2024-10

Application of carbon-based thermal field materials in silicon carbide crystal growth

Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.
Why does SiC coating receive so much attention? - VeTek Semiconductor17 2024-10

Why does SiC coating receive so much attention? - VeTek Semiconductor

SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.
Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor16 2024-10

Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.
Diamond - the future star of semiconductors15 2024-10

Diamond - the future star of semiconductors

Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.
What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? -  VeTek Semiconductor10 2024-10

What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.
Principles and Technology of Physical Vapor Deposition (PVD) Coating (2/2) - VeTek Semiconductor24 2024-09

Principles and Technology of Physical Vapor Deposition (PVD) Coating (2/2) - VeTek Semiconductor

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.
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