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Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.